Panasonic MTM86628 Specification Sheet

Multi Chip Discrete
MTM86628
Silicon P-channel MOS FET (FET)
Silicon epitaxial planar type (SBD)
For DC-DC converter
For switching circuits
 Overview
MTM86628 is the composite MOS FET (P-channel MOS FET and Schottky
Barrier Diode) that is highly suitable for DC-DC converter and other switching
circuits.
 Features
 Built-in schottky barrier diode: V
 Low on-resistance: R = 300 mW (V
on
 Low short-circuit input capacitance (Common source): C
 Small surface mounting halogen-free package: WSSMini6-F1 (1.6 mm × 1.6
mm × 0.5 mm)
 Absolute Maximum Ratings T
Parameter
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
* 1
Peak drain current
FET
Channel temperature
Storage temperature
Total power dissipation
Reverse voltage
Forward current (Average)
SBD
Junction temperature
Storage temperature
Note) * 1: t = 10 µs, Duty Cycle < 1%
* 2: Glass epoxy board: 25.4 mm
Copper foil of the drain portion should have a area of 300 mm
* 3: Stand-alone (without the board)
Publication date: November 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
= 15 V, I = 700 mA
R F
= –4.0 V)
GS
= 80 pF
iss
= 25°C
a
Symbol Rating
V –20
DSS
V ±12
GSS
I –1.0
D
I –4.0
DP
T 150
ch
T –55 to +150
stg
* 2
P 540
D1
* 3
P 150
D2
V 15
R
I 700
F(AV)
T 125
j
T –55 to +125
stg
× ×
25.4 mm 0.8 mm
SJF00111AED
 Package
 Code
WSSMini6-F1
 Pin Name
1: Gate
2: Source
3: Anode
 Marking Symbol: PL
 Internal Connection
Unit
V
V
A
A
°C
°C
mW
mW
V
mA
°C
°C
2 or more
4: Cathode
5: Drain
6: Drain
(D) (D) (K)
6 5 4
1 2 3
(G) (S) (A)
1