Multi Chip Discrete
MTM86627
Silicon P-channel MOS FET (FET)
Silicon epitaxial planar type (SBD)
For DC-DC converter
For switching circuits
Overview
MTM86627 is the composite MOS FET (P-channel MOS FET and Schttoky
Barrier Diode) that is highly suitable for DC-DC converter and other switching
circuits.
Features
Built-in schottky barrier diode: V
Low on-resistance: R
= 80 mW (V
on
Low short-circuit input capacitance (Common source): C
Small package: WSSMini6-F1 (1.6 mm × 1.6 mm × 0.5 mm)
Low drive Voltage: 1.8 V drive
Absolute Maximum Ratings T
Parameter
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
FET
Peak drain current
Channel temperature
Storage temperature
Reverse voltage
Forward current (Average)
SBD
Junction temperature
Storage temperature
Overall Total power dissipation
Note) * : Measuring on ceramic substrate at 40 mm × 38 mm × 0.2 mm
Absolute maximum rating without heat sink for P
Publication date: March 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
= 15 V, I
= 700 mA
R
F
= –4.0 V)
GS
= 300 pF
iss
= 25°C
a
Symbol
Rating
V
–20
DSS
V
±10
GSS
I
–2.0
D
I
–8.0
DP
T
150
ch
T
–55 to +150
stg
V
15
R
I
700
F(AV)
T
125
j
T
–55 to +125
stg
*
P
540
D
is 150 mA
D
SJF00085AED
Package
Code
WSSMini6-F1
Pin Name
1: Gate
2: Source
3: Anode
Marking Symbol: PK
Internal Connection
Unit
V
V
A
A
°C
°C
V
mA
°C
°C
mW
4: Cathode
5: Drain
6: Drain
(D)
(D)
(K)
6
5
4
1
2
3
(G)
(S)
(A)
1