Syntax SVX400 User Manual page 62

Atx
Table of Contents

Advertisement

Current FSB Frequency
This item displays the frontside bus (FSB) frequency. This is a display-only
item. You cannot make changes to this field.
Current DRAM Frequency
This item displays the memory (DRAM) frequency. This is a display-only item.
You cannot make changes to this field.
DRAM Clock (By SPD)
This item enables you to manually set the DRAM Clock. We recommend that
you leave this item at the default value.
DRAM Timing (Manual)
Set this By SPD to enable the system to automatically set the SDRAM timing
by SPD (Serial Presence Detect). SPD is an EEPROM chip on the DIMM
module that stores information about the memory chips it contains, including
size, speed, voltage, row and column addresses, and manufacturer. If you
disable this item, you can use the following three items to manually set the
timing parameters for the system memory
SDRAM CAS Latency (2.5T)
Enables you to select the CAS latency time in HCLKs of 2/2 or 3/3. The value
is set at the factory depending on the DRAM installed. Do not change the
values in this field unless you change specifications of the installed DRAM or
the installed CPU.
Bank Interleave (4 Bank)
Enable this item to increase memory speed. When enabled, separate memory
banks are set for odd and even addresses and the next byte of memory can
be accessed while the current byte is being refreshed.
Precharge to Active (3T)
This item is used to designate the minimum Row Precharge time of the
SDRAM devices on the module.
DRAM must continually be refreshed or it will lose its data. Normally, DRAM is
refreshed entirely as the result of a single request. This option allows you to
determine the number of CPU clocks allocated for the Row Address Strobe (RAS)
to accumulate its charge before the DRAM is refreshed. If insufficient time is
allowed, refresh may be incomplete and data lost.
Active to Precharge (7T)
This item specifies the number of clock cycles needed after a bank active
command before a precharge can occur.
Active to CMD (3T)
This item specifies the minimum required delay between activation of different
rows.
DRAM Command Rate (2T command)
This item enables you to specify the waiting time for the CPU to issue the next
command after issuing the command to the DDR memory. We recommend
34

Advertisement

Table of Contents
loading

Table of Contents