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Thermal Specifications and Design Considerations
Table 34.
Thermal "Diode" Parameters using Transistor Model
Symbol
I
FW
I
E
n
Q
Beta
R
T
NOTES:
1.
Intel does not support or recommend operation of the thermal diode under reverse bias.
2.
Same as I
3.
Characterized across a temperature range of 50–80 °C.
4.
Not 100% tested. Specified by design characterization.
5.
The ideality factor, nQ, represents the deviation from ideal transistor model behavior as
exemplified by the equation for the collector current:
Where I
base emitter junction (same nodes as VD), k = Boltzmann Constant, and T = absolute
temperature (Kelvin).
6.
The series resistance, R
more accurate readings as needed.
The processor does not support the diode correction offset that exists on other Intel
processors
Table 35.
Thermal Diode Interface
Signal Name
THERMDA
THERMDC
Datasheet
Parameter
Forward Bias Current
Emitter Current
Transistor Ideality
Series Resistance
in
Table
33.
FW
I
= I
C
= saturation current, q = electronic charge, V
S
provided in the Diode Model Table
T,
Land Number
AL1
AK1
Min
Typ
5
—
5
—
0.997
1.001
0.391
—
2.79
4.52
* (e
qV
/n
kT
–1)
BE
Q
S
= voltage across the transistor
BE
Signal
Description
diode anode
diode cathode
Max
Unit
Notes
200
µA
1, 2
200
µA
1.005
-
3, 4, 5
0.760
3, 4
6.24
Ω
3, 6
(Table
33) can be used for
91
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