Descriptions Of Pins Used To Read/Write The Flash Rom; Comparison Of S3F8275X/F8278X/F8274X And S3C8275X/C8278X/C8274X Features - Samsung S3C8275X User Manual

8-bit cmos microcontrollers
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S3F8275X/F8278X/F8274X FLASH MCU
Table 19-1. Descriptions of Pins Used to Read/Write the Flash ROM
Main Chip
Pin Name
Pin Name
VLC1
VLC2
TEST
nRESET
nRESET
V
/V
V
DD
SS
Table 19-2. Comparison of S3F8275X/F8278X/F8274X and S3C8275X/C8278X/C8274X Features
Characteristic
Program memory
Operating voltage (V
DD
Flash ROM programming mode
Pin configuration
Flash ROM programmability
NOTE: The V
(Test) pin must be connected to V
PP
19-4
Pin No.
SDAT
7
SCLK
8
V
13
PP
16
/V
9 / 10
DD
SS
S3F8275X/F8278X/F8274X
16/8/4-Kbyte Flash ROM
)
2.0 V to 3.6 V
V
= 3.3 V, V
DD
64-QFP, 64-LQFP
User Program multi time
S3C8275X/F8275X/C8278X/F8278X/C8274X/F8274X
During Programming
I/O
I/O
Serial data pin. Output port when reading and
input port when writing. Can be assigned as an
Input or push-pull output port.
I/O
Serial clock pin. Input only pin.
I
S3F8278X/F8274X: Power supply pin for Flash
ROM cell reading/writing. 12.5V is applied in
Flash writing mode and 3.3V is applied in Flash
reading mode.
S3F8275X: Power supply pin for Flash ROM cell
reading/writing. 3.3V is applied in Flash
reading/writing mode because internal block
makes 12.5V. So, TEST pin must be connected
to V
DD
I
Chip initialization
I
Power supply pin for logic circuit.
V
should be tied to +3.3 V during
DD
programming.
(TEST)=12.5V
PP
(S3F8275X only).
DD
Function
.
S3C8275X/C8278X/C8274X
16/8/4-Kbyte mask ROM
2.0 V to 3.6 V
64-QFP, 64-LQFP
Programmed at the factory

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