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S3C8275X/F8275X/C8278X/F8278X/C8274X/F8274X
6.25 kHz(main)/8.2 kHz(sub)
Table 17-12. A.C. Electrical Characteristics for Internal Flash ROM
°
= − 25
(T
C to + 85
A
Parameter
(1)
Programming time
(2)
Chip erasing time
(3)
Sector erasing time
Data access time
Number of writing/erasing
NOTES:
1.
The programming time is the time during which one byte (8-bit) is programmed.
2.
The chip erasing time is the time during which all 16K byte block is erased.
3.
The sector erasing time is the time during which all 128 byte block is erased.
4.
Maximum number of writing/erasing is 10,000 times for full-flash(S3F8275X) and 100 times for half-flash
(S3F8278X/F8274X).
5.
The chip erasing is available in Tool Program Mode only.
Instruction Clock
2 MHz
1.05 MHz
1
Instruction Clock = 1/4n x oscillator frequency (n = 1, 2, 8, 16)
Figure 17-9. Operating Voltage Range
°
C, V
= 2.2 V to 3.6 V)
DD
Symbol
Ftp
Ftp1
Ftp2
Ft
RS
FNwe
fx (Main/Sub oscillation frequency)
2
3
2.5
3.6
Supply Voltage (V)
Conditions
−
−
−
−
−
ELECTRICAL DATA
8 MHz
4.2 MHz
400 kHz (main)/32.8 kHz(sub)
4
Min
Typ
Max
−
30
−
50
−
10
−
25
−
−
10,000
Unit
−
µs
−
ms
−
ms
−
ns
(4)
Times
17-13
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