Intersil ISL70040SEHEV2Z Manual

ISL70040SEHEV2Z
The ISL70040SEHEV2Z evaluation platform is
evaluates the ISL70040SEH
ISL70023SEH. The same board can be used to
evaluate the ISL73040SEH
ISL73023SEH, which are the same die offered with
different radiation assurance screening. The
ISL70040SEH is designed to drive enhancement
mode Gallium Nitride (GaN) FETs in isolated
topologies and boost type configurations. It operates
across a supply range of 4.5V to 13.2V and offers
both non-inverting and inverting inputs to satisfy non-
inverting and inverting gate drive within a single
device. The ISL70040SEH has a 4.5V gate drive
voltage (V ) that is generated using an internal
DRV
regulator which prevents the gate voltage from
exceeding the maximum gate-source rating of
enhancement mode GaN FETs. The gate drive
voltage also features an undervoltage lockout (UVLO)
protection that ignores the inputs (IN/INB) and keeps
OUTL turned on to ensure the GaN FET is in an OFF
state whenever VDRV is below the UVLO threshold.
The ISL70040SEH inputs can withstand voltages up
to 14.7V regardless of the VDD voltage. This allows
the ISL70040SEH inputs to be connected directly to
most PWM controllers. The split outputs of the
ISL70040SEH offer the flexibility to adjust the turn-on
and turn-off speed independently by adding additional
impedance to the turn-on/off paths.
The ISL70023SEH is a 100V N-channel
enhancement mode GaN power transistor. GaN's
exceptionally high electron mobility and low
temperature coefficient allows for very low r
while its lateral device structure and majority carrier
diode provide exceptionally low Q
The end result is a device that can operate at a higher
switching frequency with more efficiency while
reducing the overall solution size.
UG147 Rev.1.01
Jan 9, 2023
alongside the
alongside the
,
DS(ON)
and zero Q .
G RR
Evaluation Board Manual
Key Features
▪ Wide V range single
DD
• 4.5V to 13.2V
▪ Location provided for load resistors to switch the
GaN FET with a load
▪ SMA connector on the gate drive voltage to
analyze the gate waveforms.
▪ Drain/source sense test points to analyze the drain
to source waveforms.
▪ Banana jack connectors for power supplies and
drain/source connections.
Specifications
▪ V range: 4.5V to 13.2V
DD
Related Literature
For a full list of related documents, visit our website:
▪ ISL70040SEH, ISL70023SEH, ISL73040SEH,
ISL73023SEH device pages
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