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Philips Semiconductors
GSM/DCS/PCS power amplifier
PINNING
SYMBOL
n.c.
RFI
HB
V
DD1HB
V
DD2HB
V
DD2HB
V
DD2LB
V
DD1LB
GND1
LB
RFI
LB
n.c.
n.c.
n.c.
RFO/V
DD3LB
RFO/V
DD3LB
GND
n.c.
RFO/V
DD3HB
RFO/V
DD3HB
n.c.
n.c.
exposed die
handbook, halfpage
n.c.
1
RFI HB
2
V DD1HB
3
V DD2HB
4
V DD2HB
5
V DD2LB
6
V DD1LB
7
GND1 LB
8
RFI LB
9
n.c.
10
Fig.2 Pin configuration.
2000 Oct 16
PIN
1
not connected
2
DCS/PCS power amplifier input
3
DCS/PCS first stage supply voltage
4
DCS/PCS second stage supply voltage
5
DCS/PCS second stage supply voltage
6
GSM second stage supply voltage
7
GSM first stage supply voltage
8
GSM first stage ground
9
GSM power amplifier input
10
not connected
11
not connected
12
not connected
13
GSM power amplifier output and third stage supply voltage
14
GSM power amplifier output and third stage supply voltage
15
ground
16
internal connection to ground; pin should not be connected to the board
17
DCS/PCS power amplifier output and third stage supply voltage
18
DCS/PCS power amplifier output and third stage supply voltage
19
not connected
20
not connected
ground
20
n.c.
19
n.c.
RFO/V DD3HB
18
17
RFO/V DD3HB
16
n.c.
CGY2014TT
15
GND
14
RFO/V DD3LB
13
RFO/V DD3LB
12
n.c.
11
n.c.
FCA181
DESCRIPTION
FUNCTIONAL DESCRIPTION
Operating conditions
The CGY2014TT is designed to meet the European
Telecommunications Standards Institute (ETSI) GSM
documents, the "ETS 300 577 specification" , which are
defined as follows:
t
= 570 s
on
T = 4.16 ms
1
Duty cycle =
/
.
8
Multislot operation can be implemented provided that the
application circuit does not drive the IC beyond the limiting
values.
Power amplifier
The GSM and DCS/PCS power amplifiers consist of three
cascaded gain stages with an open-drain configuration.
Each drain has to be loaded externally by an adequate
reactive circuit which also has to be a DC path to the
supply.
4
Product specification
CGY2014TT
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