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Philips Semiconductors
GSM/DCS/PCS power amplifier
AC CHARACTERISTICS
V
= 3.5 V; T
= 25 C; measured on the Philips demoboard (see Fig.8).
DD
amb
SYMBOL
PARAMETER
Low band: GSM power amplifier
P
input power
i(LB)
f
RF frequency range
RF(LB)
P
maximum output power
o(LB)(max)
efficiency
LB
P
minimum output power
o(LB)(min)
N
output noise in RX band
RX(LB)
H2
2nd harmonic level
LB
H3
3rd harmonic level
LB
Stab
stability
LB
High band: DCS/PCS power amplifier; note 2
P
input power
i(HB)
f
RF frequency range
RF(HB)
P
maximum output power
o(HB)(max)
efficiency
HB
P
minimum output power
o(HB)(min)
high band isolation when
HB
low band is operating
N
output noise in RX band
RX(HB)
H2
2nd harmonic level
HB
H3
3rd harmonic level
HB
Stab
stability
HB
Notes
1. The device is adjusted to provide nominal load power into a 50
replaces the 50
load. The device is switched on and the phase of the 6 : 1 load is varied 360 electrical degrees
during a 60 seconds test period.
2. The power amplifier can be matched to PCS and or DCS/PCS operation through optimization of the matching circuit.
3. Isolation can be improved to 20 dBm (typical value) with a pin diode switched in the DCS output matching.
2000 Oct 16
CONDITIONS
see Figs 3 and 4
see Fig.3
V
= 0 V; P
= 0 dBm
DD
i(LB)
P
= 0 dBm
i(LB)
f
= 925 to 935 MHz
RF
f
= 935 to 960 MHz
RF
P
= 0 dBm
i(LB)
P
= 0 dBm
i(LB)
P
= 0 dBm; note 1
i(LB)
for DCS operation
see Figs 5 and 6
see Fig.5
V
= 0 V; P
= 3 dBm
DD
i(HB)
V
= 3.5 V; P
= 0 dBm;
DD(LB)
i(LB)
V
= 0 V; P
= 3 dBm;
DD(HB)
i(HB)
note 3
P
= 3 dBm
i(HB)
P
= 3 dBm
i(HB)
P
= 3 dBm
i(HB)
P
= 3 dBm; note 1
i(HB)
6
MIN.
TYP.
2
0
880
34.5
35
50
55
35
2
3
1710
32
32.5
38
40
32
0
load. The device is switched off and a 6 : 1 load
Product specification
CGY2014TT
MAX.
UNIT
+2
dBm
915
MHz
dBm
%
dBm
117
dBm/Hz
129
dBm/Hz
35
dBc
35
dBc
60
dBc
5
dBm
1785
MHz
dBm
%
dBm
dBm
121
dBm/Hz
35
dBc
35
dBc
60
dBc
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