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Philips Semiconductors
GSM/DCS/PCS power amplifier
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
positive supply voltage
DD
T
maximum operating junction temperature
j(max)
T
storage temperature
stg
P
total power dissipation
tot
P
GSM input power
i(LB)
P
DCS/PCS input power
i(HB)
Note
1. The total power dissipation is measured under GSM pulse conditions in a good thermal environment;
see "Application Note CTT0003" .
THERMAL CHARACTERISTICS
SYMBOL
R
thermal resistance from junction to case
th(j-c)
Note
1. This thermal resistance is measured under GSM pulse conditions in a good thermal environment;
see "Application Note CTT0003" .
DC CHARACTERISTICS
V
= 3.5 V; T
= 25 C; general operating conditions applied; peak current values measured during burst; unless
DD
amb
otherwise specified.
SYMBOL
Supplies: pins V
DD1LB
V
positive supply voltage
DD
I
GSM positive peak supply current
DD(LB)
I
DCS/PCS positive peak supply current
DD(HB)
Notes
1. The supply circuit includes a (drain) MOS switch with R
2. No RF input signal or P
3. No RF input signal or P
2000 Oct 16
PARAMETER
PARAMETER
PARAMETER
, V
, RFO/V
, V
DD2LB
DD3LB
< 30 dBm; V
i(LB)
DD
< 30 dBm; V
i(HB)
DD
note 1
note 1
CONDITIONS
, V
and RFO/V
DD1HB
DD2HB
note 1
P
= 0 dBm
i(LB)
note 2
P
= 3 dBm
i(HB)
note 3
= 40 m . The battery voltage is 3.6 V (typical value).
DSon
= 1 V.
= 1 V.
5
CONDITIONS
CONDITIONS
MIN.
TYP.
DD3HB
0
3.5
2
0.5
1.5
1.5
0.25
1
Product specification
CGY2014TT
MAX.
UNIT
5.2
V
150
C
150
C
2.0
W
10
dBm
10
dBm
VALUE
UNIT
30
K/W
MAX.
UNIT
4.2
V
A
3
A
A
2
A
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