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Philips Semiconductors
GSM/DCS/PCS power amplifier
Performance characteristics in GSM band
37
handbook, halfpage
efficiency
P o
(dBm)
35
output power
33
31
800
850
V
= 3 V.
DD1(LB)
V
= V
= 3.5 V.
DD2(LB)
DD3(LB)
P
= 0 dBm.
i(LB)
Fig.3
Output power and efficiency as a function of
the frequency.
Performance characteristics in DCS band
35.5
handbook, halfpage
P o
(dBm)
34.5
33.5
32.5
output power
31.5
1650
1700
V
= 3 V.
DD1(HB)
V
= V
= 3.5 V.
DD2(HB)
DD3(HB)
P
= 3 dBm.
i(HB)
Fig.5
Output power and efficiency as a function of
the frequency.
2000 Oct 16
FCA171
(3)
(2)
(1)
(3)
(2)
(1)
900
950
1000
f RF (MHz)
(1) T
= 85 C.
amb
(2) T
= 25 C.
amb
(3) T
= 20 C.
amb
FCA172
efficiency
(3)
(2)
(1)
(3)
(2)
(1)
1750
1800
1850
f RF (MHz)
(1) T
= 85 C.
amb
(2) T
= 25 C.
amb
(3) T
= 20 C.
amb
40
handbook, halfpage
60
P o
(dBm)
(%)
30
40
20
20
10
0
0
0
f
= 900 MHz.
RF(LB)
P
= 0 dBm.
i(LB)
V
= 3 V.
DD1(LB)
V
= V
DD
DD2(LB)
Fig.4
Output power as a function of the supply
voltage.
55
40
handbook, halfpage
P o
(dBm)
(%)
45
30
35
20
25
10
15
0
0
f
= 1750 MHz.
RF(HB)
P
= 3 dBm.
i(HB)
V
= 3 V.
DD1(HB)
V
= V
DD
DD2(HB)
Fig.6
Output power as a function of the supply
voltage.
7
Product specification
CGY2014TT
(1)
(2)
(3)
1
2
(1) T
= 85 C.
amb
(2) T
= 25 C.
amb
= V
.
(3) T
= 20 C.
DD3(LB)
amb
(1)
(2)
(3)
1
2
(1) T
= 85 C.
amb
(2) T
= 25 C.
amb
= V
.
(3) T
= 20 C.
DD3(HB)
amb
FCA176
3
4
V DD (V)
FCA173
3
4
V DD (V)
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