Advertisement
Philips Semiconductors
GSM/DCS/PCS power amplifier
FEATURES
Operating at 3.6 V battery supply
Power Amplifier (PA) output power:
35 dBm in GSM band and 32.5 dBm in DCS/PCS band
Input power: 0 dBm in GSM band and 3 dBm in
DCS/PCS band
Wide operating temperature range from 20 to +85 C
HTSSOP20 exposed die pad package.
APPLICATIONS
Dual-band systems: Low Band (LB) from
880 to 915 MHz hand-held transceivers for E-GSM and
High Band (HB) from 1710 to 1910 MHz for DCS/PCS
applications.
QUICK REFERENCE DATA
SYMBOL
V
positive supply voltage
DD
I
GSM positive peak supply current
DD(LB)
P
maximum output power in GSM band
o(LB)(max)
I
DCS/PCS positive peak supply current
DD(HB)
P
maximum output power in DCS/PCS band
o(HB)(max)
T
ambient temperature
amb
ORDERING INFORMATION
TYPE
NUMBER
NAME
CGY2014TT
HTSSOP20
2000 Oct 16
PARAMETER
plastic, heatsink thin shrink small outline package; 20 leads;
body width 4.4 mm
GENERAL DESCRIPTION
The CGY2014TT is a dual-band GSM/DCS/PCS GaAs
Monolithic Microwave Integrated Circuit (MMIC) power
amplifier. The circuit is specifically designed to operate at
3.6 V battery supply voltage.
The power amplifier requires only a 30 dB harmonic
low-pass filter to comply with the transmit spurious
specification.
The voltages applied on pins V
of the power amplifier and permit to switch it off.
PACKAGE
DESCRIPTION
2
Product specification
CGY2014TT
(drain) control the power
DD
MIN.
TYP.
MAX.
3.5
4.2
2
34.5
35
1.5
32
32.5
20
+85
VERSION
SOT527-1
UNIT
V
A
dBm
A
dBm
C
Advertisement
