LG -T370 Service Manual page 161

Level LocationNo.
C207
Capacitor
6 C210
Ceramic,Chip
C236
VA402
VA404
VA408
VA409
6 Varistor
VA604
VA605
VA607
VA608
C501
C506
Capacitor
6 C509
Ceramic,Chip
C711
C712
R617
6 Resistor,Chip
R618
L401 Inductor
6
L402 Multilayer,Chip
FB502
FB503
6 Filter,Bead
FB506
FB507
6 U301 IC,MCP,NAND
6 U501 IC,Proximity
VA308
VA309
6 VA310 Varistor
VA311
VA312
R417
6 R524 Resistor,Chip
R705
Capacitor
6 C607
Ceramic,Chip
LGE Internal Use Only
13. EXPLODED VIEW & REPLACEMENT PART LIST
Description PartNumber
ECZH0001216
SEVY0004301
ECCH0000143
ERHY0003301
ELCH0003825
SFBH0008102
EAN61927501
EUSY0376201
SEVY0004001
ERHZ0000404
ECCH0000113
Spec
C1005X5R1A224KT000E 220nF 10% 10V X5R -
55TO+85C 1005 R/TP - TDK KOREA
COOPERATION
ICVL0518100Y500FR 18V 0% 10F 1.0*0.5*0.55
NONE SMD R/TP INNOCHIPS TECHNOLOGY
MCH155CN102KK 1nF 10% 50V X7R -55TO+125C
1005 R/TP - ROHM Semiconductor KOREA
CORPORATION
MCR01MZP5J101 100OHM 5% 1/16W 1005 R/TP -
ROHM.
LQG15HS56NJ02D 56NH 5% - 200mA 0.82OHM
800MHZ 8 SHIELD NONE 1.0X0.5X0.5MM R/TP
MURATA MANUFACTURING CO.,LTD.
BLM15HD182SN1D 1800 ohm 1.0X0.5X0.5 25%
2.2 ohm 0.2A SMD R/TP 2P 0 MURATA
MANUFACTURING CO.,LTD.
H9DA2GH1GHMMMR-46M NAND/2G SDRAM/1G
1.7VTO1.95V 8.0x9.0x0.9 TR 130P NAND+DDR
SDRAM FBGA 2Gb NAND(LB/128Mx16)+1Gb
DRAM(DDR/200MHz/16Mx4x16) HYNIX
SEMICONDUCTOR INC.
GP2AP002S00F GP2AP002S00F
GP2AP002S00F,,8 ,R/TP , SHARP
CORPORATION. SHARP CORPORATION.
EVLC18S02003 18V 0% 3F 1.0*0.5*0.6 NONE
SMD R/TP AMOTECH CO., LTD.
MCR01MZP5J102 1KOHM 5% 1/16W 1005 R/TP -
ROHM.
MCH155A180J 18pF 5% 50V NP0 -55TO+125C
1005 R/TP - ROHM Semiconductor KOREA
CORPORATION
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