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Panasonic UP05C8PG Specification Sheet page 3

Multi chip discrete silicon npn epitaxial planar type (tr) silicon epitaxial planar type (ccd load device)

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UP05C8PG_ V
CE(sat)
V
 I
CE(sat)
1
0.1
T
= 85°C
a
−25°C
25°C
0.01
0.1
1
Collector current I
Characteristics charts of CCD load device
UP05C8PG_I
P
I
 V
P
DS
8
7
6
5
4
3
2
1
0
0
2
4
6
Drain-source voltage V
This product complies with the RoHS Directive (EU 2002/95/EC).
- I
C
C
350
I
/ I
= 10
C
B
300
250
T
a
200
150
100
50
0
1
10
100
Collector current I
(mA)
C
-V
DS
8
10
( V )
DS
UP05C8PG_ h
- I
FE
C
h
 I
FE
C
= 85°C
25°C
−25°C
10
100
(mA)
C
SJJ00401AED
UP05C8PG
3

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