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UP05C8PG
Electrical Characteristics T
Tr
Parameter
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Forward current transfer ratio
Transition frequency
*
Power gain
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
* : Pulse measurement
CCD Load Device
Parameter
Pinchi off current
Output impedance
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
UN05C8PG_P
P
T
T
140
120
100
80
60
40
20
0
0
40
80
Ambient temperature T
Characteristics charts of Tr
UP05C8PG_I
I
V
C
20
I
= 100 µA
T
= 25°C
B
a
18
16
14
12
10
8
6
4
2
0
0
2
4
6
Collector-emitter voltage V
2
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C±3°C
a
Symbol
V
I
= 100 mA, I
CBO
C
V
I
= 10 mA, I
EBO
E
V
V
BE
CE
h
V
FE
CE
f
V
T
CB
G
V
P
CB
Symbol
I
V
P
DS
Z
V
O
DS
-T
T
a
a
120
( °C )
a
-V
C
CE
CE
45
V
CE
40
80 µA
35
30
60 µA
25
20
40µA
15
20µA
10
5
0
8
10
12
0
( V )
CE
Conditions
= 0
E
= 0
C
= 10 V, I
= 2 mA
C
= 10 V, I
= 2 mA
C
= 10 V, I
= -15 mA, f = 200 MHz
E
= 10 V, I
= -1 mA, f = 100 MHz
E
Conditions
= 8 V, V
= 0
G
= V, V
= 0
G
UP05C8PG_I
-I
C
B
I
I
C
B
= 6 V
0.2
0.4
0.6
0.8
1.0
( mA )
Base current I
B
SJJ00401AED
Min
Typ
Max
Unit
30
3
720
mV
100
250
1 300
MHz
20
Min
Typ
Max
Unit
5.0
7.0
mA
0.02
MW
UP05C8PG_I
-V
C
BE
I
V
C
BE
50
V
= 6 V
CE
40
T
= 85°C
a
30
25°C
20
−25°C
10
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-emitter voltage V
BE
V
V
dB
1.4
( V )
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