Multi Chip Discrete
UP0KG8D
Silicon epitaxial planar type (SBD)
Silicon PNP epitaxial planar type (Tr)
For digital circuits
Features
Two elements incorporated into one package (SBD + Tr)
Costs can be reduced through downsizing of the equipment and reduction of
the number of parts
Basic Part Number
MA2SD24 + UNR31A3
Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
SBD
Peak forward current
Non-repetitive peak forward
surge current
Collector-base voltage
(Emitter open)
Collector-emitter voltage
Tr
(Base open)
Collector current
Total power dissipation
Overall
Junction temperature
Storage temperature
Note) * : 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Publication date: November 2005
= 25°C
a
Symbol
Rating
V
20
R
V
20
RRM
I
200
F(AV)
I
300
FM
I
1
FSM
V
-50
CBO
V
-50
CEO
I
-80
C
P
125
T
T
125
j
T
–55 to +125
stg
SJJ00334AED
(0.30)
5
1
(0.50)
1.00
1.60
Display at No.1 lead
Unit
V
1: Anode
V
2: Base
3: Emitter
mA
mA
Marking Symbol: 6K
Internal Connection
A
V
V
mA
mW
°C
°C
Unit: mm
+0.05
0.20
0.10
–0.02
±0.02
4
2
3
(0.50)
±0.05
±0.05
4: Collector
5: Cathode
SSMini5-F2 Package
5
4
SBD
Tr
1
2
3
1