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Characteristics charts of FET
MTM86627_ P
P
T
D
a
600
Measuring on ceramic substrate at
40 mm × 38 mm × 0.8 mm
400
200
Single unit
0
0
40
80
Ambient temperature T
MTM86627_ R
DS(on)
R
I
DS(on)
1
10
−1
10
−2
0
− 0.5
−1.0
Drain current I
Characteristics charts of SBD
MTM86627_I
I
V
F
F
1
10
−1
T
= 75°C
a
10
−2
−25°C
10
−3
10
−4
10
−5
0
0.2
Forward voltage V
This product complies with the RoHS Directive (EU 2002/95/EC).
-T
D
a
− 0.10
− 0.08
− 0.06
− 0.04
− 0.02
0
120
160
0
− 0.2
Drain-source voltage V
(°C)
a
- I
D
D
400
300
V
= 1.8 V
GS
2.5 V
200
4.0 V
100
0
−1.5
−2.0
0
(A)
Drain-source voltage V
D
-V
F
F
10
3
10
2
25°C
10
1
10
−1
0.4
0.6
0
( V )
Reverse voltage V
F
SJF00085AED
MTM86627_ I
-V
D
DS
I
V
D
DS
V
= −1.3 V
GS
−1.1 V
−1.0 V
−
0.9 V
−
0.8 V
− 0.4
− 0.6
− 0.8
−1.0
(V)
DS
MTM86627_ C
- V
X
DS
C
V
X
DS
C
iss
C
rss
C
oss
−5
−10
−15
−20
(V)
DS
MTM86627_I
-V
R
R
I
V
R
R
T
= 75°C
a
25°C
−25°C
10
20
(V)
R
MTM86627
MTM86627_ R
-V
DS(on)
R
V
DS(on)
GS
1 000
I
= −1.0 A
D
100
10
0
−2
−4
−6
Gate-source voltage V
GS
MTM86627_C
-V
t
R
C
V
t
R
100
f = 1 MHz
T
= 25°C
a
80
60
40
20
0
0
10
( V )
Reverse voltage V
R
GS
−8
(V)
20
4
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