Download Print this page

Panasonic 2SC3130 Specification Sheet page 2

Silicon npn epitaxial planar type transistors

Advertisement

2SC3130
 T
P
C
a
200
160
120
80
40
0
0
40
80
Ambient temperature T
 I
V
CE(sat)
100
10
1
T
a
25°C
0.1
0.01
0.1
1
10
Collector current I
C
 V
C
ob
CB
1.6
1.2
0.8
0.4
0
1
10
Collector-base voltage V
2
This product complies with the RoHS Directive (EU 2002/95/EC).
80
60
40
20
0
120
160
0
( °C )
Collector-emitter voltage V
a
C
360
= 10
I
/ I
C
B
300
240
180
= 75°C
120
−25°C
60
0
100
0.1
( mA )
Collector current I
= 0
I
E
f = 1 MHz
= 25°C
T
a
100
( V )
CB
 V
I
C
CE
= 25°C
T
a
= 500 µA
I
B
400 µA
300 µA
200 µA
100 µA
2
4
6
8
10
12
( V )
CE
 I
h
FE
C
= 4 V
V
CE
= 75°C
T
a
25°C
−25°C
1
10
100
( mA )
C
SJC00125BED
 V
I
C
BE
60
V
CE
25°C
50
= 75°C
−25°C
T
a
40
30
20
10
0
0
0.4
0.8
1.2
1.6
Base-emitter voltage V
BE
 I
f
T
E
4
V
CB
= 25°C
T
a
3
2
1
0
− 0.1
−1
−10
( mA )
Emitter current I
E
= 4 V
2.0
( V )
= 4 V
−100

Advertisement

loading