Transistors
2SC3312
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification
Complementary to 2SA1310
■ Features
• Optimum for high-density mounting
• Allowing supply with the radial taping
• Low noise voltage NV
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Noise voltage
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: March 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol
Rating
V
60
CBO
V
55
CEO
V
EBO
I
100
C
I
200
CP
P
300
C
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V
I
CBO
C
V
I
CEO
C
V
I
EBO
E
V
V
BE
CE
I
V
CBO
CB
I
V
CEO
CE
*
h
V
FE
CE
V
I
CE(sat)
C
f
V
T
CB
NV
V
CE
R
g
R
S
180 to 360
260 to 520
Unit
V
V
7
V
mA
mA
mW
°C
°C
Conditions
= 10 µA, I
= 0
E
= 2 mA, I
= 0
B
= 10 µA, I
= 0
C
= 1 V, I
= 30 mA
C
= 20 V, I
= 0
E
= 20 V, I
= 0
B
= 5 V, I
= 2 mA
C
= 100 mA, I
= 10 mA
B
= 5 V, I
= −2 mA, f = 200 MHz
E
= 10 V, I
= 1 mA, G
= 80 dB
C
V
= 100 kΩ, Function = FLAT
T
360 to 700
SJC00128BED
4.0
±0.2
2.0
±0.2
0.75 max.
+0.20
0.45
–0.10
(2.5) (2.5)
1
2
3
Min
Typ
Max
60
55
7
0.1
180
700
200
150
Unit: mm
+0.20
0.45
–0.10
0.7
±0.1
1: Emitter
2: Collector
3: Base
NS-B1 Package
Unit
V
V
V
1
V
µA
µA
1
1
V
MHz
mV
1