Panasonic 2SC2631 Specification Sheet

Transistors
2SC2631
Silicon NPN epitaxial planar type
For low-frequency high breakdown voltage amplification
Complementary to 2SA1123
■ Features
• Satisfactory linearity of forward current transfer ratio h
• High collector-emitter voltage (Base open) V
• Small collector output capacitance (Common base, input open cir-
cuited) C
ob
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Noise voltage
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: March 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
CEO
= 25°C
a
Symbol Rating
V 150
CBO
V 150
CEO
V
EBO
I 50
C
I 100
CP
P 750
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I
CEO C
V I
EBO E
I V
CBO CB
*
h V
FE CE
V I
CE(sat) C
f V
T CB
C V
ob CB
NV V
CE
R
g
R S
130 to 220 185 to 330
FE
Unit
V
V
5 V
mA
mA
mW
°C
°C
Conditions
= 100 µA, I = 0
B
= 10 µA, I = 0
C
= 100 V, I = 0
E
= 5 V, I = 10 mA
C
= 30 mA, I = 3 mA
B
= 10 V, I = −10 mA, f = 200 MHz
E
= 10 V, I = 0, f = 1 MHz
E
= 10 V, I = 1 mA, G = 80 dB
C V
= 100 kΩ, Function = FLAT
SJC00117BED
5.0 ±0.2
0.7 ±0.1
+0.15
0.45 0.45
–0.1
+0.6 +0.6
2.5 2.5
–0.2 –0.2
1 2 3
TO-92-B1 Package
Min Typ Max
150
5
1
130 330
1
160
3
150 300
Unit: mm
4.0 ±0.2
+0.15
–0.1
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
Unit
V
V
µA

V
MHz
pF
mV
1