Panasonic 2SC3130 Specification Sheet

Transistors
2SC3130
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■ Features
• High transition frequency f
• Small collector output capacitance (Common base, input open cir-
cuited) C and reverse transfer capacitance (Common emitter) C
ob
• Mini type package, allowing downsizing of the equipment and au-
tomatic insertion through the tape packing and the magazine pack-
ing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
* 2
h ratio
FE
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Reverse transfer capacitance
(Common emitter)
Collector-base parameter
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * 1: Rank classification
Rank
h
FE
* 2: ∆h = h
/ h
FE FE2 FE1
Publication date: February 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
T
= 25°C
a
Symbol Rating
V 15
CBO
V 10
CEO
V 3
EBO
I 50
C
P 150
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 2 mA, I
V I
CEO C
= 10 µA, I
V I
EBO E
I V
CBO CB
* 1
h V
FE CE
∆h
h
FE FE2
h
FE1
= 20 mA, I
V I
CE(sat) C
f V
T CB
C V
ob CB
C V
rb CB
r ' • C V
bb C CB
P Q
75 to 130 110 to 220
rb
10˚
Unit
V
V
V
mA
Marking Symbol: 1S
mW
°C
°C
Conditions
= 0
B
= 0
C
= 10 V, I = 0
E
= 4 V, I = 5 mA
C
= 4 V, I = 100 µA
: V
CE C
= 4 V, I = 5 mA
: V
CE C
= 4 mA
B
= 4 V, I = −5 mA, f = 200 MHz
E
= 4 V, I = 0, f = 1 MHz
E
= 4 V, I = 0, f = 1 MHz
E
= 4 V, I = −5 mA, f = 31.9 MHz
E
SJC00125BED
+0.10
0.40
–0.05
0.16
3
1 2
(0.95) (0.95)
1.9 ±0.1
+0.20
2.90
–0.05
EIAJ: SC-59
Mini3-G1 Package
Min Typ Max
10
3
1
75 220
0.75 1.60
0.5
1.4 1.9 2.5
1.4
0.45
11
+0.10
–0.06
1: Base
2: Emitter
3: Collector
Unit
V
V
µA


V
GHz
pF
pF
ps
1