Panasonic 2SC1473 Specification Sheet

Transistors
2SC1473, 2SC1473A
Silicon NPN triple diffusion planar type
For general amplification
2SC1473 complementary to 2SA1018
2SC1473A complementary to 2SA1767
■ Features
• High collector-emitter voltage (Base open) V
• High transition frequency f
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage
(Emitter open)
Collector-emitter voltage 2SC1473
(Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open)
Collector-emitter cutoff
current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: March 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
CEO
T
= 25°C
a
Symbol Rating
2SC1473 V 250
CBO
2SC1473A 300
V 200
CEO
2SC1473A 300
V 7
EBO
I 70
C
I 100
CP
P 750
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 100 µA, I
2SA1473 V I
CEO C
2SA1473A
= 1 µA, I
V I
EBO E
2SA1473 I V
CEO CE
2SA1473A V
CE
*
h V
FE CE
= 50 mA, I
V I
CE(sat) C
f V
T CB
C V
ob CB
Q R
60 to 150 100 to 220
Unit
V
V
V EIAJ: SC-43A
mA
mA
mW
°C
°C
Conditions
= 0
B
= 0
C
= 120 V, T = 60°C, I = 0
a B
= 120 V, I = 0
B
= 10 V, I = 5 mA
C
= 5 mA
B
= 10 V, I = −10 mA, f = 200 MHz
E
= 10 V, I = 0, f = 1 MHz
E
SJC00105BED
5.0 ±0.2
0.7 ±0.1
+0.15
0.45 0.45
–0.1
+0.6 +0.6
2.5 2.5
–0.2 –0.2
1 2 3
TO-92-B1 Package
Min Typ Max
200
300
7
1
1
60 220
1.2
50 80
10
Unit: mm
4.0 ±0.2
+0.15
–0.1
1: Emitter
2: Collector
3: Base
Unit
V
V
µA

V
MHz
pF
1