Panasonic 2SC4808G Specification Sheet

Transistors
2SC4808G
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
■ Features
• Low noise figure NF
• High forward transfer gain S
• High transition frequency f
• SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Forward transfer gain
Maximum unilateral power gain
Noise figure
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Pulse measurement
Publication date: May 2007
This product complies with the RoHS Directive (EU 2002/95/EC).

2
21e
T
= 25°C
a
Symbol Rating
V 15
CBO
V 10
CEO
V
EBO
I 80
C
P 125
C
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V I
CBO C
V I
CEO C
I V
CBO CB
I V
EBO EB
*
h V
FE CE
f V
T CE
C V
ob CB
S 
2
V
21e CE
G V
UM CE
NF V
CE
Unit
V
V
2 V
mA
mW
°C
°C
Conditions
= 10 µA, I = 0
E
= 100 µA, I = 0
B
= 10 V, I = 0
E
= 2 V, I = 0
C
= 8 V, I = 20 mA
C
= 8 V, I = 15 mA, f = 0.8 GHz
C
= 10 V, I = 0, f = 1 MHz
E
= 8 V, I = 15 mA, f = 0.8 GHz
C
= 8 V, I = 15 mA, f = 0.8 GHz
C
= 8 V, I = 7 mA, f = 0.8 GHz
C
SJC00395AED
■ Package
• Code
SSMini3-F3
• Marking Symbol: 3M
• Pin Name
1. Base
2. Emitter
3. Collector
Min Typ Max
15
10
1
1
50 150 300
5 6
0.7 1.2
11 14
15
1.3 2.0
Unit
V
V
µA
µA

GHz
pF
dB
dB
dB
1