Panasonic 2SC3311A Specification Sheet

Transistors
2SC3311A
Silicon NPN epitaxial planar type
For low-frequency amplification
Complementary to 2SA1309A
■ Features
• Optimum for high-density mounting
• Allowing supply with the radial taping
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Product of no-rank is not classified and have no indication for rank.
Publication date: March 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol Rating
V 60
CBO
V 50
CEO
V
EBO
I 100
C
I 200
CP
P 300
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I
CBO C
V I
CEO C
V I
EBO E
I V
CBO CB
I V
CEO CE
*
h V
FE CE
V I
CE(sat) C
f V
T CB
C V
ob CB
Q R
160 to 260 210 to 340
Unit
V
V
7 V
mA
mA
mW
°C
°C
Conditions
= 10 µA, I = 0
E
= 2 mA, I = 0
B
= 10 µA, I = 0
C
= 10 V, I = 0
E
= 10 V, I = 0
B
= 10 V, I = 2 mA
C
= 100 mA, I = 10 mA
B
= 10 V, I = −2 mA, f = 200 MHz
E
= 10 V, I = 0, f = 1 MHz
E
S No-rank
290 to 460 160 to 460
SJC00127BED
4.0 ±0.2 2.0 ±0.2
0.75 max.
+0.20
0.45
–0.10
(2.5) (2.5)
1 2 3
Min Typ Max
60
50
7
0.1
160 460
0.1 0.3
150
3.5
Unit: mm
+0.20
0.45
–0.10
0.7 ±0.1
1: Emitter
2: Collector
3: Base
NS-B1 Package
Unit
V
V
V
µA
µA
1

V
MHz
pF
1