Transistors
2SC2634
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification
Complementary to 2SA1127
■ Features
• Low noise voltage NV
• High forward current transfer ratio h
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoffcurrent (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Noise voltage
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: March 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
FE
= 25°C
a
Symbol
Rating
V
60
CBO
V
55
CEO
V
EBO
I
100
C
I
200
CP
P
400
C
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V
I
CBO
C
V
I
CEO
C
V
I
EBO
E
V
V
BE
CE
I
V
CBO
CB
I
V
CEO
CE
*
h
V
FE
CE
V
I
CE(sat)
C
f
V
T
CB
NV
V
CE
R
g
R
S
180 to 360
260 to 520
Unit
V
V
7
V
mA
mA
mW
°C
°C
Conditions
= 10 µA, I
= 0
E
= 1 mA, I
= 0
B
= 10 µA, I
= 0
C
= 1 V, I
= 30 mA
C
= 10 V, I
= 0
E
= 10 V, I
= 0
B
= 5 V, I
= 2 mA
C
= 100 mA, I
= 10 mA
B
= 5 V, I
= −2 mA, f = 200 MHz
E
= 10 V, I
= 1 mA, G
= 80 dB
C
V
= 100 kΩ, Function = FLAT
T
360 to 700
SJC00119BED
5.0
±0.2
0.7
±0.1
+0.15
0.45
0.45
–0.1
+0.6
+0.6
2.5
2.5
–0.2
–0.2
1
2 3
TO-92-B1 Package
Min
Typ
Max
60
55
7
1
1
100
0.01
1.00
180
700
0.6
200
150
Unit: mm
4.0
±0.2
+0.15
–0.1
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
Unit
V
V
V
V
nA
µA
V
MHz
mV
1