Panasonic 2SC3934 Specification Sheet

Transistors
2SC3934
Silicon NPN epitaxial planar type
For high-frequency wide-band low-noise amplification
■ Features
• High transition frequency f
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Forward transfer gain
Maximum unilateral power gain
Noise figure
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
T
= 25°C
a
Symbol Rating
V 15
CBO
V 12
CEO
V 2.5
EBO
I 30
C
I 50
CP
P 150
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
I V
CBO CB
= 2 V, I
I V
EBO EB
= 10 V, I
h V
FE CE
= 10 V, I
f V
T CE
C V
ob CB
S  = 10 V, I
2
V
21e CE
= 10 V, I
G V
UM CE
= 10 V, I
NF V
CE
SJC00144BED
Unit
V
V
V
mA
mA
Marking Symbol: 1U
mW
°C
°C
Conditions
= 10 V, I = 0
E
= 0
C
= 10 mA
C
= 10 mA, f = 0.8 GHz
C
= 10 V, I = 0, f = 1 MHz
E
= 20 mA, f = 0.8 GHz
C
= 20 mA, f = 0.8 GHz
C
= 5 mA, f = 0.8 GHz
C
+0.1
0.3
–0.0
3
1 2
(0.65) (0.65)
1.3 ±0.1
2.0 ±0.2
10˚
SMini3-G1 Package
Min Typ Max
100
40
4.5
1.2
9 12
12 14
1.3 2.5
Unit: mm
+0.10
0.15
–0.05
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
Unit
nA
µA
1

GHz
pF
dB
dB
dB
1