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Panasonic 2SA1018 Specification Sheet page 2

Silicon pnp epitaxial planar type transistors

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2SA1018
 T
P
C
a
1 000
800
600
400
200
0
0
20
40
60
80
100
Ambient temperature T
 I
V
CE(sat)
−100
−10
−1
25°C
− 0.1
− 0.01
− 0.1
−1
−10
Collector current I
C
 V
C
ob
CB
20
16
12
8
4
0
−1
−10
Collector-base voltage V
2
This product complies with the RoHS Directive (EU 2002/95/EC).
−100
−80
−60
−40
−20
0
−2
120
140
160
0
( °C )
Collector-emitter voltage V
a
C
300
= 10
I
/ I
C
B
250
200
150
= 75°C
T
a
100
−25°C
50
0
− 0.1
−100
( mA )
Collector current I
10 000
= 0
I
E
f = 1 MHz
= 25°C
T
a
1 000
100
10
1
−100
0
40
( V )
Ambient temperature T
CB
 V
I
C
CE
= 25°C
T
a
= −1.0 mA
I
B
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
−4
−6
−8
−10
−12
( V )
CE
 I
h
FE
C
= −10 V
V
CE
= 75°C
T
a
25°C
−25°C
−1
−10
−100
( mA )
C
 T
I
CEO
a
= −120 V
V
CE
80
120
160
200
240
( °C )
a
SJC00008BED
 V
I
C
BE
−120
V
CE
25°C
−100
= 75°C
−25°C
T
a
−80
−60
−40
−20
0
− 0.4
− 0.8
−1.2
−1.6
0
Base-emitter voltage V
BE
 I
f
T
E
120
V
CB
= 25°C
T
a
100
80
60
40
20
0
0.1
1
10
( mA )
Emitter current I
E
= −10 V
−2.0
( V )
= −10 V
100

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