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Panasonic 2SA1532G Specification Sheet

Silicon pnp epitaxial planar type transistors.
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Transistors
2SA1532G
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SC3930G
■ Features
• High transition frequency f
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Base-emitter saturation voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Noise figure
Reverse transfer impedance
Common-emitter reverse transfer capacitance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: July 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
T
= 25°C
a
Symbol
Rating
−30
V
CBO
−20
V
CEO
−5
V
EBO
−30
I
C
P
150
C
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V
V
BE
CE
I
V
CBO
CB
I
V
CEO
CE
I
V
EBO
EB
*
h
V
FE
CE
V
I
CE(sat)
C
f
V
T
CB
NF
V
CB
Z
V
rb
CB
C
V
re
CB
B
C
70 to 140
110 to 220
Unit
V
V
V
mA
mW
°C
°C
Conditions
= −10 µA, I
= −1 mA
C
= −10 V, I
= 0
E
= −20 V, I
= 0
B
= −5 V, I
= 0
C
= −10 V, I
= 1 mA
C
= −10 mA, I
= −1 mA
B
= −10 V, I
= 1 mA, f = 200 MHz
E
= −10 V, I
= 1 mA, f = 5 MHz
E
= −10 V, I
= 1 mA, f = 2 MHz
E
= −10 V, I
= 1 mA, f = 10.7 MHz
E
SJC00346BED
■ Package
• Code
SMini3-F2
• Marking Symbol: E
• Pin Name
1. Base
2. Emitter
3. Collector
Min
Typ
Max
− 0.7
− 0.1
−100
−10
70
220
− 0.1
150
300
2.8
4.0
22
60
1.2
2.0
Unit
V
µA
µA
µA
V
MHz
dB
pF
1

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   Summary of Contents for Panasonic 2SA1532G

  • Page 1 This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA1532G Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3930G ■ Features • High transition frequency f • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing ■...
  • Page 2 This product complies with the RoHS Directive (EU 2002/95/EC). 2SA1532G  T ( °C ) Ambient temperature T  I = −10 V = 75°C 25°C −25°C − 0.1 −1 −10 −100 ( mA ) Collector current I  I = −10 V...
  • Page 3 This product complies with the RoHS Directive (EU 2002/95/EC). SMini3-F2 2.00 ±0.20 +0.05 0.30 − 0.02 (0.65) (0.65) 1.30 ±0.10 (5°) Unit: mm +0.05 0.13 − 0.02...
  • Page 4 Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.

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