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Panasonic 2SA1738 Specification Sheet

Silicon pnp epitaxial planar type transistors.
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Transistors
2SA1738
Silicon PNP epitaxial planar type
For high speed switching
■ Features
• High speed switching (Pair with 2SC3757)
• Low collector-emitter saturation voltage V
• Mini type package, allowing downsizing of the equipment and au-
tomatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Turn-off time
Storage time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE1
Publication date: November 2002
This product complies with the RoHS Directive (EU 2002/95/EC).
CE(sat)
= 25°C
a
Symbol
Rating
−15
V
CBO
−15
V
CEO
−4
V
EBO
−50
I
C
−100
I
CP
P
200
C
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
I
V
CBO
CB
I
V
EBO
EB
*
h
V
FE1
CE
h
V
FE2
CE
= −10 mA, I
V
I
CE(sat)
C
f
V
T
CB
C
V
ob
CB
t
Refer to the switching time measurement circuit
on
t
off
t
stg
Q
R
50 to 120
90 to 150
10˚
Unit
V
V
V
mA
mA
Marking Symbol: AK
mW
°C
°C
Conditions
= −8 V, I
= 0
E
= −3 V, I
= 0
C
= −1 V, I
= −10 mA
C
= −1 V, I
= −1 mA
C
= −1 mA
B
= −10 V, I
= 10 mA, f = 200 MHz
E
= −5 V, I
= 0, f = 1 MHz
E
SJC00026BED
+0.10
0.40
–0.05
0.16
3
1
2
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC-59
Mini3-G1 Package
Min
Typ
Max
− 0.1
− 0.1
50
150
30
− 0.1
− 0.2
800
1 500
1
12
20
19
Unit: mm
+0.10
–0.06
Unit
µA
µA
V
MHz
pF
ns
ns
ns
1

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   Summary of Contents for Panasonic 2SA1738

  • Page 1 Transistors 2SA1738 Silicon PNP epitaxial planar type For high speed switching ■ Features • High speed switching (Pair with 2SC3757) • Low collector-emitter saturation voltage V • Mini type package, allowing downsizing of the equipment and au- tomatic insertion through the tape packing and the magazine packing.
  • Page 2 2SA1738 Switching time measurement circuit Test circuit = −1.5 V 62 Ω 2 kΩ 0.1 µF 52 Ω 51 Ω = −5.8 V = 9.8 V = Ground = −8.0 V  V −60 = 25°C = −600 µA −50 −500 µA...
  • Page 3 Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.

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