Transistors
2SA1018
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC1473
■ Features
• High collector-emitter voltage (Base open) V
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-emitter cut-off current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: January 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
CEO
= 25°C
a
Symbol
Rating
−250
V
CBO
−200
V
CEO
−5
V
EBO
−70
I
C
−100
I
CP
P
750
C
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= −100 µA, I
V
I
CEO
C
= −1 µA, I
V
I
EBO
E
I
V
CEO
CE
*
h
V
FE
CE
= −50 mA, I
V
I
CE(sat)
C
f
V
T
CB
C
V
ob
CB
Q
R
60 to 150
100 to 220
Unit
V
0.45
V
V
mA
mA
mW
°C
°C
Conditions
= 0
B
= 0
C
= −120 V, I
= 0
B
= −10 V, I
= −5 mA
C
= −5 mA
B
= −10 V, I
= 10 mA, f = 200 MHz
E
= −10 V, I
=0, f = 1 MHz
E
SJC00008BED
5.0
±0.2
0.7
±0.1
+0.15
+0.15
0.45
–0.1
–0.1
+0.6
+0.6
2.5
2.5
–0.2
–0.2
1
2 3
TO-92-B1 Package
Min
Typ
Max
−200
−5
−1
60
220
−1.5
50
10
Unit: mm
4.0
±0.2
1 : Emitter
2 : Collector
3 : Base
Unit
V
V
µA
V
MHz
pF
1