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Panasonic 2SA1309A Specification Sheet

Silicon pnp epitaxial planar type transistors.
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Transistors
2SA1309A
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SC3311A
■ Features
• High forward current transfer ratio h
• Allowing supply with the radial taping
• Optimum for high-density mounting
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: March 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
FE
= 25°C
a
Symbol
Rating
−60
V
CBO
−50
V
CEO
−7
V
EBO
−100
I
C
−200
I
CP
P
300
C
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V
I
CBO
C
V
I
CEO
C
V
I
EBO
E
I
V
CBO
CB
I
V
CEO
CE
*
h
V
FE
CE
V
I
CE(sat)
C
f
V
T
CB
C
V
ob
CB
Q
R
160 to 260
210 to 340
Unit
V
V
V
mA
mA
mW
°C
°C
Conditions
= −10 µA, I
= 0
E
= −2 mA, I
= 0
B
= −10 µA, I
= 0
C
= −10 V, I
= 0
E
= −10 V, I
= 0
B
= −10 V, I
= −2 mA
C
= −50 mA, I
= −5 mA
B
= −10 V, I
= 1 mA, f = 200 MHz
E
= −10 V, I
= 0, f = 1 MHz
E
S
No rank
290 to 460
160 to 460
SJC00016BED
4.0
±0.2
2.0
±0.2
0.75 max.
+0.20
0.45
–0.10
(2.5) (2.5)
1
2
3
Min
Typ
Max
−60
−50
−7
−100
160
− 0.3
80
3.5
Unit: mm
+0.20
0.45
–0.10
0.7
±0.1
1: Emitter
2: Collector
3: Base
NS-B1 Package
Unit
V
V
V
nA
−1
µA
460
V
MHz
pF
1

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   Summary of Contents for Panasonic 2SA1309A

  • Page 1

    Transistors 2SA1309A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3311A ■ Features • High forward current transfer ratio h • Allowing supply with the radial taping • Optimum for high-density mounting ■ Absolute Maximum Ratings T Parameter...

  • Page 2

    2SA1309A  T ( °C ) Ambient temperature T  I CE(sat) −10 = 10 −1 = 75°C 25°C − 0.1 −25°C − 0.01 − 0.001 −1 −10 −100 −1 000 ( mA ) Collector current I  V f = 1 MHz = 25°C...

  • Page 3

    Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.

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