Program Memory Write Procedure - NEC uPD75P3116 Datasheet

8.2 Program Memory Write Procedure

Program memory can be written at high speed using the following procedure.
(1) Pull down unused pins to Vss via resistors. Set the X1 pin to low.
(2) Supply 5 V to the V
(3) Wait 10 µ s.
(4) Select the program memory address zero-clear mode.
(5) Supply 6 V to V and 12.5 V to V
DD
(6) Write data in the 1 ms write mode.
(7) Select the verify mode. If the data is written, go to (8) and if not, repeat (6) and (7).
(8) Additional write. (X: Number of write operations from (6) and (7)) × 1 ms
(9) Apply four pulses to the X1 pin to increment the program memory address by one.
(10) Repeat (6) to (9) until the end address is reached.
(11) Select the program memory address zero-clear mode.
(12) Return the V - and V
DD
(13) Turn off the power.
The following figure shows steps (2) to (9).
V
PP
V
PP
V
DD
V + 1
DD
V
DD
V
DD
X1
D0/P60 to D3/ P63
D4/P50 to D7/P53
MD0/P30
MD1/P31
MD2/P32
MD3/P33
and V pins.
DD PP
.
PP
-pin voltages to 5 V.
PP
X repetitions
Write Verify
Data
Data input
output
Data Sheet U11369EJ3V0DS
µ PD75P3116
Additional Address
write increment
Data input
29