Cmos Signal Group Dc Specifications; Peci Dc Electrical Limits - Intel BX80562QX6700 - Core 2 Extreme 2.66 GHz Processor Datasheet

Data sheet
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Electrical Specifications
Table 12.

CMOS Signal Group DC Specifications

Symbol
V
IL
V
IH
V
OL
V
OH
I
OL
I
OH
I
LI
I
LO
NOTES:
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
1.
V
is defined as the voltage range at a receiving agent that will be interpreted as a logical low
2.
IL
value.
The V
3.
TT
V
is defined as the voltage range at a receiving agent that will be interpreted as a logical high
4.
IH
value.
V
and V
5.
IH
All outputs are open drain.
6.
I
is measured at 0.10 * V
7.
OL
Leakage to V
8.
Leakage to V
9.
Table 13.

PECI DC Electrical Limits

Symbol
V
in
V
hysteresis
V
n
V
p
I
source
I
sink
I
leak+
I
leak-
C
bus
V
noise
NOTE:
1.
V
TT
Refer to
2.
The leakage specification applies to powered devices on the PECI bus.
3.
The input buffers use a Schmitt-triggered input design for improved noise immunity.
Datasheet
Parameter
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Current
Output High Current
Input Leakage Current
Output Leakage Current
referred to in these specifications refers to instantaneous V
may experience excursions above V
OH
I
TT.
OH
with land held at V
SS
with land held at 300 mV
TT
Definition and Conditions
Input Voltage Range
Hysteresis
Negative-edge threshold voltage
Positive-edge threshold voltage
High level output source
(V
= 0.75 * V
)
OH
TT
Low level output sink
(V
= 0.25 * V
)
OL
TT
High impedance state leakage to V
High impedance leakage to GND
Bus capacitance
Signal noise immunity above 300 MHz
supplies the PECI interface. PECI behavior does not affect V
Table 4
for V
specifications.
TT
Min
-0.10
V
* 0.70
TT
-0.10
0.90 * V
TT
1.70
1.70
N/A
N/A
.
TT
is measured at 0.90 * V
TT.
.
TT
Min
-0.30
0.1 * V
TT
0.275 * V
TT
0.550 * V
TT
-6.0
0.5
N/A
TT
N/A
0.1 * V
TT
Max
Unit
Notes
2, 3
V
* 0.30
V
TT
3, 4, 5
V
+ 0.10
V
TT
3
V
* 0.10
V
TT
3, 5,6
V
+ 0.10
V
TT
3, 7
4.70
mA
3,
4.70
mA
8
± 100
µA
9
± 100
µA
.
TT
Max
Units
Notes
V
V
TT
V
0.500 * V
V
TT
0.725 * V
V
TT
N/A
mA
1.0
mA
50
µA
10
µA
10
pF
V
p-p
min/max specifications.
TT
1
7
3
2
2
25

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