Siemens SITRANS TH100 Operating Instructions Manual page 210

Technical data
12.2 SITRANS TH320/TH420/TR320/TR420/TF320/TF420
FM/CSA
Name
Output terminals
SITRANS TH/
SITRANS TF single
chamber housing: 1, 2
SITRANS TR: 3, 4
SITRANS TF dual cham‐
ber housing: (+) and
(-)
• Permissible ambi‐
ent temperature
Output terminals
SITRANS TH/
SITRANS TF single
chamber housing: 1, 2
SITRANS TR: 3, 4
SITRANS TF dual cham‐
ber housing: (+) and
(-)
• Permissible ambi‐
ent temperature
Input terminals
SITRANS TH/TF: 3, 4, 5,
6, 7, 8, 9
SITRANS TR: 5, 6, 7, 8,
9, 10, 11, 12
• "Non-explosive/ener‐
gy limited NIFW" type
of protection
210
SITRANS TH/TR
IS,CL I, Div 1, GP ABCD, T6 ... T4
Ex ia IIC T6 ... T4 Ga
AEx ia IIC T6 ... T4 Ga
or
Ex ib [ia Ga] IIC T6 ... T4 Gb
AEx ib [ia Ga] IIC T6 ... T4 Gb
U = 30 V DC, I = 120 mA, P
i i
900 mW, L = 0 μH, C = 1.0 nF
i i
-50 °C to +85 °C
(-58 °F to +185 °F) temperature
class T4
-50 °C to +70 °C
(-58 °F to +158 °F) temperature
class T5
-50 °C to +55 °C
(-58 °F to +131 °F) temperature
class T6
U = 30 V DC, I = 100 mA, P
i i
750 mW, L = 0 μH, C = 1.0 nF
i i
-50 °C to +85 °C
(-58 °F to +185 °F) temperature
class T4
-50 °C to +75 °C
(-58 °F to +167 °F) temperature
class T5
-50 °C to +60 °C
(-58 °F to +140 °F) temperature
class T6
TH/TR/TF320
U = 7.2 V DC, I = 12.9 mA, P
o o
13.5 μF
TH/TR/TF 420 (input 1 or 2)
U = 7.2 V DC, I = 7.3 mA, P
o o
13.5 μF
SITRANS TF
IS, CL I, II, III, Div 1, GP ABC‐
DEFG, T6 ... T4
Ex ia IIC T6 ... T4 Ga
AEx ia IIC T6 ... T4 Ga
or
Ex ib [ia Ga] IIC T6 ... T4 Gb
AEx ib [ia Ga] IIC T6 ... T4 Gb
= U = 30 V DC, I = 120 mA, P
i i i
900 mW, L = 0 μH, C
i
-50 ... +70 °C (-58 ... +158 °F)
Temperature class T4
-50 ... +40 °C (-58 ... +104 °F)
Temperature class T6
= U = 30 V DC, I = 100 mA, Pi =
i i i
750 mW, L = 0 μH, C
i
-50 ... +75 °C (-58 ... +167 °F)
Temperature class T4
-50 ... +50 °C (-58 ... +122 °F)
Temperature class T6
= 23.3 mW, L = 200 mH, C
o o
= 13.2 mW, L = 667 mH, C
o o
SITRANS TH100/TH320/TH420/TR320/TR420/TF320/TF420 with 4 to 20 mA/HART
Display
IS,CL I, Div 1, GP ABCD, T6 ... T4
or
Ex ia IIC T6 ... T4 Ga
AEx ia IIC T6 ... T4 Ga
= U = 30 V, I = 120 mA, P
i i i
= 2.2 nF 900 mW, C
i i
-40 ... +85 °C (-40 ... +185 °F)
Temperature class T4
1)
-40 ... +55 °C (-40 ... +131 °F)
Temperature class T6
1)
U = 30 V, I = 100 mA, P
i i
= 2.2 nF 750 mW, C
i i
-40 ... +85 °C (-40 ... +185 °F)
Temperature class T4
1)
-40 ... +60 °C (-40 ... +140 °F)
Temperature class T6
1)
-
=
o
=
o
Operating Instructions, 05/2020, A5E41864807-AB
=
i
= 2.2 nF, L = 0 µH
i
=
i
= 2.2 nF, Li = 0 µH