EPOX EP-61LXA-M Manual page 32

EP-61LXA-M
50ns: (Faster) Burst Wait State, for 50ns EDO DRAM.
60ns: (Slower) Burst Wait State, for 60ns Fast Page Mode/EDO DRAM.
MA Additional Wait State: This allows the option to insert an additional wait state
before the beginning of a memory read. Use of this option may be required to
achieve compatibility with some system configurations.
The default is Slow.
Fast: Inserts no wait state.
Slow: Inserts one wait state for the memory cycle.
EDO RAS# to CAS# Delay: Allows you to insert a timing delay between the CAS
and RAS strobe signals, used when DRAM is written to, read from, or refreshed.
The default is 3.
2: Faster performance.
3: Better reliability.
EDO RAS# Precharge Time: The precharge time is the number of cycles it takes
for the RAS to accumulate its charge before EDO DRAM refresh. If insufficient
time is allowed, refresh may be incomplete and the EDO DRAM may fail to retain
data.
The default is 4.
3: Time equals 3 host clocks.
4: Time equals 4 host clocks.
EDO DRAM Read Burst (B/E/F): This setting will allow you to set the timing for
burst mode reads from EDO DRAM. The lower the timing number the faster the
system addresses the memory.
The default is x333.
x222: Use of this option may cause conflicts with some system
configurations.
x333: This is used for standard system configurations.
EDO DRAM Write Burst (B/E/F): This setting will allow you to set the timing for
burst mode writes to EDO DRAM. The lower the timing number the faster the
system addresses the memory.
The default is x333.
BIOS
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