GENERAL
Numbers of semi-conductors
Frequency coverage
Memory channels
Usable conditions
Frequency stability
Antenna impedance
Power supply requirement
Current drain
Dimensions
Weight
TRANSMITTER
Output power
Emission mode
Modulation system
Max. frequency deviation
Spurious emission
Microphone
Operating mode
RECEIVER
Receiving system
Modulation acceptance
Intermediate frequency"
Sensitivity
Squelch sensitivity
Spurious response rejection ratio:
Selectivity
Audio output power
Audio output Impedance
Transistors
38
FET
4
IC
27
Diode
49
144.000 ~ 146.000MHz : 25KHz steps
3 channels, any inband frequency programmable
Temperature: —10°C - 60°C (14°F - 140°F)
Operationable time:
continuous
Within +1.5KHz
50 ohms unbalanced
13.8\ DC +15% (negative ground) 3.0A Мах.
Transmitting
HIGH. (10W)
Approx. 2.5A
LOW
(1W)
Approx. 1.2A
Receiving
At max audio output
Approx. 0.7A
Squelched
Approx. 0.5A
156mm (W) x 58mm (H) x 228mm (D)
Approx. 2.2kg
10W (HIGH), 1W (LOW)
162.
Variable reactance frequency modulation
+5KHz
More than 60dB below carrier
600 ohms dynamic microphone with push-to-talk switch
(1C-SM2 electret condenser microphone may also be used.)
Simplex, Duplex (+600KHz from receive frequency)
Double-conversion superheterodyne
16F 3
1st:
10.695MHz
2nd: 455KHz
More than 30dB S+N+D/N+D at 1иМ
Less than 0.6 uV for 20dB Noise quieting
Less than 0.4 uV
More than 60dB
More than +7.5KHz at —6dB point
Less than +15KHz at —60dB point
More than 2.0W
8 ohms
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