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High Power Density, Low Profile NexFET™ Power Block II
The evaluation module (EVM) CSD87384MEVM-603 uses the CSD87384M together with TI controller
TPS51219 providing 1.0-V output at up to 30 A from input voltage ranging 8 to 20 V.
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1
Description
1.1
Typical Applications
1.2
Features
2
Electrical Performance Specifications
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3
Schematic
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4
Test Setup
4.1
Test Equipment
4.2
Recommended Test Setup
5
Test Procedure
5.1
Line and Load Regulation and Efficiency Measurement Procedure
5.2
List of Testpoints
5.3
Equipment Shutdown
6
Performance Data and Typical Characteristic Curves
7
EVM Assembly Drawing and PCB Layout
8
Bill of Materials
1
CSD87384MEVM-603 Schematic
2
Tip and Barrel Measurement for Vsw Waveform
3
CSD87384MEVM-603 Recommended Test Setup
4
Efficiency versus Output Current for CSD87384M With TPS51219
5
Switching Node Waveform, VIN = 12 V, Iout = 20 A
6
Switching Node Waveform, VIN = 19 V, Iout = 20 A
7
CSD87384MEVM-603 Top Layer Assembly Drawing (Top View)
8
CSD87384MEVM-603 Bottom Assembly Drawing (Bottom View)
9
CSD87384MEVM-603 Top Copper (Top View)
10
CSD87384MEVM-603 Internal Layer 1 (Top View)
11
CSD87384MEVM-603 Internal Layer 2 (Top View)
12
CSD87384MEVM-603 Internal Layer 3 (Top View)
13
CSD87384MEVM-603 Internal Layer 4 (Top View)
14
CSD87384MEVM-603 Bottom Copper (Top View)
1
CSD87384MEVM-603 Electrical Performance Specifications
2
Function of Each Testpoint
SLPU001A – February 2014 – Revised February 2014
Submit Documentation Feedback
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High Power Density, Low Profile NexFET™ Power Block II for Notebook
Copyright © 2014, Texas Instruments Incorporated
SLPU001A – February 2014 – Revised February 2014
for Notebook Power Supply
Contents
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List of Figures
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List of Tables
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User's Guide
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Power Supply
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Related Manuals for Texas Instruments CSD87384MEVM-603
Summary of Contents for Texas Instruments CSD87384MEVM-603
- Page 1 High Power Density, Low Profile NexFET™ Power Block II for Notebook Power Supply The evaluation module (EVM) CSD87384MEVM-603 uses the CSD87384M together with TI controller TPS51219 providing 1.0-V output at up to 30 A from input voltage ranging 8 to 20 V.
- Page 2 Description The CSD87384MEVM-603 is designed to use a regulated voltage ranging 8 to 20 V to produce 1.0-V output at up to 30 A of load current. The CSD87384MEVM-603 demonstrates Power Block II together with TI controller TPS51219 in a typical low voltage application with D-CAP2™ mode operation. The EVM also provides a number of testpoints to evaluate the performance of the CSD87384M.
- Page 3 µ VOUT_200 R208 TP209 R210 TP210 Figure 1. CSD87384MEVM-603 Schematic SLPU001A – February 2014 – Revised February 2014 High Power Density, Low Profile NexFET™ Power Block II for Notebook Power Supply Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated...
- Page 4 The minimum recommended wire size is 2x AWG number 14, with the total length of wire less than 4 ft (2 ft output, 2 ft return). High Power Density, Low Profile NexFET™ Power Block II for Notebook SLPU001A – February 2014 – Revised February 2014 Power Supply Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated...
- Page 5 Figure 3. CSD87384MEVM-603 Recommended Test Setup Figure 3 shows the recommended test setup to evaluate the CSD87384MEVM-603. Working at an ESD workstation, make sure that any wrist straps, bootstraps, or mats are connected. Reference the user-to- earth ground before power is applied to the EVM.
- Page 6 2. Put the jumper on J201. 3. Shut down V5VIN and VIN. High Power Density, Low Profile NexFET™ Power Block II for Notebook SLPU001A – February 2014 – Revised February 2014 Power Supply Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated...
- Page 7 VIN = 12 V, Iout = 20 A VIN = 19 V, Iout = 20 A SLPU001A – February 2014 – Revised February 2014 High Power Density, Low Profile NexFET™ Power Block II for Notebook Power Supply Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated...
- Page 8 Figure 7 through Figure 14 show the design of the CSD87384MEVM-603 printed circuit board. The EVM was designed using a six-layer, 1-oz. copper circuit board. Figure 7. CSD87384MEVM-603 Top Layer Assembly Drawing (Top View) Figure 8. CSD87384MEVM-603 Bottom Assembly Drawing (Bottom View) High Power Density, Low Profile NexFET™...
- Page 9 EVM Assembly Drawing and PCB Layout www.ti.com Figure 9. CSD87384MEVM-603 Top Copper (Top View) Figure 10. CSD87384MEVM-603 Internal Layer 1 (Top View) SLPU001A – February 2014 – Revised February 2014 High Power Density, Low Profile NexFET™ Power Block II for Notebook...
- Page 10 EVM Assembly Drawing and PCB Layout www.ti.com Figure 11. CSD87384MEVM-603 Internal Layer 2 (Top View) Figure 12. CSD87384MEVM-603 Internal Layer 3 (Top View) High Power Density, Low Profile NexFET™ Power Block II for Notebook SLPU001A – February 2014 – Revised February 2014...
- Page 11 EVM Assembly Drawing and PCB Layout www.ti.com Figure 13. CSD87384MEVM-603 Internal Layer 4 (Top View) Figure 14. CSD87384MEVM-603 Bottom Copper (Top View) SLPU001A – February 2014 – Revised February 2014 High Power Density, Low Profile NexFET™ Power Block II for Notebook...
- Page 12 Capacitor, Ceramic, 16V, X7R, 10% 0402 R204, R210 Resistor, Chip, 1/16W, 1% 0402 High Power Density, Low Profile NexFET™ Power Block II for Notebook SLPU001A – February 2014 – Revised February 2014 Power Supply Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated...
- Page 13 Figure 7 ......................... • Updated Figure 8 NOTE: Page numbers for previous revisions may differ from page numbers in the current version. SLPU001A – February 2014 – Revised February 2014 Revision History Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated...
- Page 14 STANDARD TERMS AND CONDITIONS FOR EVALUATION MODULES Delivery: TI delivers TI evaluation boards, kits, or modules, including any accompanying demonstration software, components, or documentation (collectively, an “EVM” or “EVMs”) to the User (“User”) in accordance with the terms and conditions set forth herein. Acceptance of the EVM is expressly subject to the following terms and conditions.
- Page 15 FCC Interference Statement for Class B EVM devices NOTE: This equipment has been tested and found to comply with the limits for a Class B digital device, pursuant to part 15 of the FCC Rules. These limits are designed to provide reasonable protection against harmful interference in a residential installation.
- Page 16 【無線電波を送信する製品の開発キットをお使いになる際の注意事項】 開発キットの中には技術基準適合証明を受けて いないものがあります。 技術適合証明を受けていないもののご使用に際しては、電波法遵守のため、以下のいずれかの 措置を取っていただく必要がありますのでご注意ください。 1. 電波法施行規則第6条第1項第1号に基づく平成18年3月28日総務省告示第173号で定められた電波暗室等の試験設備でご使用 いただく。 2. 実験局の免許を取得後ご使用いただく。 3. 技術基準適合証明を取得後ご使用いただく。 なお、本製品は、上記の「ご使用にあたっての注意」を譲渡先、移転先に通知しない限り、譲渡、移転できないものとします。 上記を遵守頂けない場合は、電波法の罰則が適用される可能性があることをご留意ください。 日本テキサス・イ ンスツルメンツ株式会社 東京都新宿区西新宿６丁目２４番１号 西新宿三井ビル 3.3.3 Notice for EVMs for Power Line Communication: Please see http://www.tij.co.jp/lsds/ti_ja/general/eStore/notice_02.page 電力線搬送波通信についての開発キットをお使いになる際の注意事項については、次のところをご覧くださ い。http://www.tij.co.jp/lsds/ti_ja/general/eStore/notice_02.page SPACER EVM Use Restrictions and Warnings: 4.1 EVMS ARE NOT FOR USE IN FUNCTIONAL SAFETY AND/OR SAFETY CRITICAL EVALUATIONS, INCLUDING BUT NOT LIMITED TO EVALUATIONS OF LIFE SUPPORT APPLICATIONS.
- Page 17 Notwithstanding the foregoing, any judgment may be enforced in any United States or foreign court, and TI may seek injunctive relief in any United States or foreign court. Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright © 2015, Texas Instruments Incorporated...
- Page 18 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue.
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