Advertisement
Philips Semiconductors
VHF push-pull power MOS transistor
400
handbook, halfpage
C rs
(pF)
300
200
100
0
0
10
V
= 0; f = 1 MHz.
GS
Fig.8
Feedback capacitance as a function of
drain-source voltage; typical values per
section.
APPLICATION INFORMATION
Class-B operation
RF performance in CW operation in a common source push-pull test circuit. T
otherwise specified. R
GS
MODE OF OPERATION
CW, class-B
CW, class-C
Ruggedness in class-B operation
The BLF278 is capable of withstanding a load mismatch corresponding to VSWR = 7:1 through all phases under the
following conditions: V
DS
2003 Sep 19
MGE620
20
30
40
50
V DS (V)
= 4
per section; optimum load impedance per section = 3.2 + j4.3
f
(MHz)
108
108
= 50 V; f = 108 MHz at rated load power.
V
I
DS
DQ
(V)
(A)
50
2
0.1
50
V
= 0
GS
6
Product Specification
= 25 C; R
= 0.15 K/W unless
h
th mb-h
(V
DS
P
G
L
p
(W)
(dB)
300
20
typ. 22
300
typ. 18
BLF278
= 50 V).
D
(%)
>60
typ. 70
typ. 80
Advertisement
