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Philips Semiconductors
VHF push-pull power MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
Per transistor section
V
drain-source voltage
DS
V
gate-source voltage
GS
I
drain current (DC)
D
P
total power dissipation
tot
T
storage temperature
stg
T
junction temperature
j
THERMAL CHARACTERISTICS
SYMBOL
R
thermal resistance from junction
th j-mb
to mounting base
R
thermal resistance from
th mb-h
mounting base to heatsink
100
handbook, halfpage
I D
(A)
(1)
10
1
1
Total device; both sections equally loaded.
(1) Current is this area may be limited by R
(2) T
= 25 C.
mb
Fig.2 DC SOAR.
2003 Sep 19
PARAMETER
PARAMETER
MRA988
(2)
10
100
V
(V)
DS
.
DSon
CONDITIONS
T
25 C; total device; both
mb
sections equally loaded
CONDITIONS
total device; both sections
equally loaded.
total device; both sections
equally loaded.
500
handbook, halfpage
P tot
(W)
400
300
200
100
0
500
Total device; both sections equally loaded.
(1) Continuous operation.
(2) Short-time operation during mismatch.
3
MIN.
65
VALUE
max. 0.35
max. 0.15
(2)
(1)
0
40
80
Fig.3 Power derating curves.
Product Specification
BLF278
MAX.
UNIT
125
V
20
V
18
A
500
W
150
C
200
C
UNIT
K/W
K/W
MGE616
120
160
T h ( C)
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