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Philips Semiconductors
VHF push-pull power MOS transistor
CHARACTERISTICS
T
= 25 C unless otherwise specified.
j
SYMBOL
Per transistor section
V
drain-source breakdown voltage V
(BR)DSS
I
drain-source leakage current
DSS
I
gate-source leakage current
GSS
V
gate-source threshold voltage
GSth
V
gate-source voltage difference
GS
of both sections
g
forward transconductance
fs
g
/g
forward transconductance ratio
fs1
fs2
of both sections
R
drain-source on-state resistance V
DSon
I
drain cut-off current
DSX
C
input capacitance
is
C
output capacitance
os
C
feedback capacitance
rs
C
drain-flange capacitance
d-f
V
group indicator
GS
GROUP
A
B
C
D
E
F
G
H
J
K
L
M
N
2003 Sep 19
PARAMETER
LIMITS
(V)
MIN.
MAX.
2.0
2.1
2.1
2.2
2.2
2.3
2.3
2.4
2.4
2.5
2.5
2.6
2.6
2.7
2.7
2.8
2.8
2.9
2.9
3.0
3.0
3.1
3.1
3.2
3.2
3.3
CONDITIONS
= 0; I
= 100 mA
GS
D
V
= 0; V
= 50 V
GS
DS
V
= 20 V; V
= 0
GS
DS
V
= 10 V; I
= 50 mA
DS
D
V
= 10 V; I
= 50 mA
DS
D
V
= 10 V; I
= 5 A
DS
D
V
= 10 V; I
= 5 A
DS
D
= 10 V; I
= 5 A
GS
D
V
= 10 V; V
= 10 V
GS
DS
V
= 0; V
= 50 V; f = 1 MHz
GS
DS
V
= 0; V
= 50 V; f = 1 MHz
GS
DS
V
= 0; V
= 50 V; f = 1 MHz
GS
DS
GROUP
O
P
Q
R
S
T
U
V
W
X
Y
Z
4
Product Specification
BLF278
MIN.
TYP.
MAX.
125
2.5
1
2
4.5
100
4.5
6.2
0.9
1.1
0.2
0.3
25
480
190
14
5.4
LIMITS
(V)
MIN.
MAX.
3.3
3.4
3.4
3.5
3.5
3.6
3.6
3.7
3.7
3.8
3.8
3.9
3.9
4.0
4.0
4.1
4.1
4.2
4.2
4.3
4.3
4.4
4.4
4.5
UNIT
V
mA
A
V
mV
S
A
pF
pF
pF
pF
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