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Philips Semiconductors
VHF push-pull power MOS transistor
2
handbook, halfpage
Z i
( )
1
0
1
2
25
75
Class-B operation; V
= 50 V; I
DS
R
= 4
(per section); P
GS
L
Fig.14 Input impedance as a function of frequency
(series components); typical values per
section.
handbook, halfpage
Z i
Fig.16 Definition of MOS impedance.
2003 Sep 19
MGE685
r i
x i
125
175
f (MHz)
= 2
0.1 A;
DQ
= 300 W.
Z L
MBA379
8
handbook, halfpage
Z L
( )
R L
6
4
2
0
25
Class-B operation; V
DS
R
= 4
(per section); P
GS
Fig.15 Load impedance as a function of frequency
(series components); typical values per
section.
30
handbook, halfpage
G p
(dB)
20
10
0
25
Class-B operation; V
DS
R
= 4
(per section); P
GS
Fig.17 Power gain as a function of frequency;
typical values per section.
12
Product Specification
BLF278
MGE686
X L
75
125
f (MHz)
= 50 V; I
= 2
0.1 A;
DQ
= 300 W.
L
MGE687
75
125
f (MHz)
= 50 V; I
= 2
0.1 A;
DQ
= 300 W.
L
175
175
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