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Philips Semiconductors
VHF push-pull power MOS transistor
0
handbook, halfpage
T.C.
(mV/K)
1
2
3
4
5
2
10
10
V
= 10 V.
DS
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
400
handbook, halfpage
R DSon
(m )
300
200
100
0
0
50
V
= 10 V; I
= 5 A.
GS
D
Fig.6
Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
2003 Sep 19
MGE623
1
1
10
I D (A)
MGE621
100
150
T j ( C)
30
handbook, halfpage
I D
(A)
20
10
0
0
V
= 10 V; T
= 25 C.
DS
j
Fig.5
Drain current as a function of gate-source
voltage; typical values per section.
1200
handbook, halfpage
C
(pF)
800
400
0
0
V
= 0; f = 1 MHz.
GS
Fig.7
Input and output capacitance as functions
of drain-source voltage; typical values per
section.
5
Product Specification
BLF278
MGE622
5
10
V GS (V)
MGE615
C is
C os
20
40
V DS (V)
15
60
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