Advertisement
Philips Semiconductors
VHF push-pull power MOS transistor
30
handbook, halfpage
G p
(dB)
(1)
20
10
0
0
200
Class-B operation; V
= 50 V; I
DS
Z
= 3.2 + j4.3
(per section); R
L
(1) T
= 25 C.
h
(2) T
= 70 C.
h
Fig.9
Power gain as a function of load power;
typical values.
600
handbook, halfpage
P L
(W)
(1)
400
(2)
200
0
0
5
Class-B operation; V
= 50 V; I
DS
Z
= 3.2 + j4.3
(per section); R
L
(1) T
= 25 C.
h
(2) T
= 70 C.
h
Fig.11 Load power as a function of input power;
typical values.
2003 Sep 19
MGE682
(2)
400
600
P L (W)
= 2
0.1 A; f = 108 MHz;
DQ
= 4
(per section).
GS
MGE684
10
15
P i (W)
= 2
0.1 A; f = 108 MHz;
DQ
= 4
(per section).
GS
80
handbook, halfpage
D
(%)
60
(1)
(2)
40
20
0
0
Class-B operation; V
DS
Z
= 3.2 + j4.3
(per section); R
L
(1) T
= 25 C.
h
(2) T
= 70 C.
h
Fig.10 Efficiency as a function of load power;
typical values.
7
Product Specification
BLF278
MGE683
(2)
(1)
200
400
P L (W)
= 50 V; I
= 2
0.1 A; f = 108 MHz;
DQ
= 4
(per section).
GS
600
Advertisement
