Samsung R710 Service Manual page 116

4
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO'S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
D
VDC
C966 C987
100nF 4700nF
25V 25V
P1.05V
(8A)
C
C1006
R815
0.47nF
3.01K
1%
EC20 EC19
C138
330uF 330uF
100nF
2.5V 2.5V
10V
AL AL
R817 R816
7.5K 150K
1% 1%
G_P1.1V
B
KBC3_PWRON
A
4
COM-22C-015(1996.6.5) REV. 3
3
CHIPSET POWER(P1.05V & P1.1V)
P5.0V_AUX
C986 C1048
4700nF 4700nF
25V 25V
C1023
100nF
10V
8 7 6 5
C1004
D4 D3 D2 D1
4700nF
6.3V
Q538
Si4894BDY G
4
S3 S2 S1
L9 1.5uH 3 2 1
C1003 100nF 25V R824
PCMC063T-1R5MN 8 7 6 5
D4 D3 D2 D1
R831 10K 1% R832
Q539
Si4894BDY
G
4
S3 S2 S1
3 2 1
ESR Max = 16.5mohm
VDC
C1005
10nF
C1007
R818
100nF
1M
10V
1%
G_P1.1V
C988
G_P1.1V
1nF
50V
R823 10K 1%
C1002
100nF
10V
G_P1.1V
3
2
SHORT6
INSTPAR
3
2 1
BAT54A
C1012
D515
4700nF
6.3V
U527
SC415MLTRT
16 3
VDD2 VDD1
3.3 17 2 R827 3.3 C1011 100nF 25V
BST2 BST1
19 24
DH2 DH1
18 1
LX2 LX1
15 4
DL2 DL1
4.7K 20 1% 23 R825 10K 1%
ILIM2 ILIM1
11 8
FB2 FB1
12 7
VOUT2 VOUT1
14 5
EN2 EN1 C1009
21 22
100nF
PGD2 PGD1
13 6
SS2 SS1 10V
10
TON
C1010
25 9
PAD RTN
10nF
G_P1.1V
G_P1.1V
R828
OCP@1.05V = I Vally12.12A / RMS 13.9A
OCP@1.2V = I Vally 3.85A / RMS 5.59A
C1013
100nF
10V
G_P1.1V
SHORT5
R1608-SHORT
G_P1.1V
2
VDC
C972 C971 C1047
100nF 4700nF 4700nF
25V 25V 25V
Q535
L10
PHKD13N03LT
2.2uH
1 8
S2 D2_2
2 7
G2 D2_1
3 6
S1 D1_2
C1008
4 5
R826
G1 D1_1
0.47nF
10K
1%
ESR Max = 26mohm
1%
R819
200K
20K
R820
1%
nostuff
G_P1.1V
10K 1%
KBC3_PWRON
P3.3V
R833
10K
1%
VCCP3_PWRGD
D:/mentor/Geneva2/Geneva2_ext_PV_0507/design_blocks/PWR_MV_Cantiga
1
D
C
P1.1V
EC21
C142
330uF
100nF
2.5V
10V
AL
B
A
SAMSUNG
ELECTRONICS
SRP Sheet Number: 74 of 78