Samsung R710 Service Manual page 117

4
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO'S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
J1
JACK-DC-POWER-3P
B505
2
EXCML16A270u
D
3
4
MNT1
R504
MNT2 C502
C501
100K
100nF
10nF 1%
25V
B504
EXCML16A270u
R503
100K
1%
R584
300K
1%
P5.0V_CHG
R867
C
R564 4.7
C593 C584
1000nF 1000nF
G_CHG G_CHG
CHG_REF
CHG_REF CHG_REF
R570 R566 R567
200K 30.1K 10K
B
1% 1% 1%
R569 R573 R565 R568
10K 150K 100K 30.1K
1% 1% 1% 1%
3 G_CHG G_CHG
D
Q515
RHU002N06
R575 10K 1%
G
1
2 S R574
475K
1%
R543
43.2K
1%
G_CHG G_CHG
3
D
A
G
KBC3_CHG2600
1
S 2
G_CHG
4
COM-22C-015(1996.6.5) REV. 3
3
CHARGER & POWER MANAGEMENT CHARGER & POWER MANAGEMENT
B340A
D517
1 2
VDC_ADPT
U501 U506
AP4435GM AP4435GM
1 8 8 1
S1 D1 D1 S1
2 7 7 2
S2 D2 D2 S2
3 6 6 3
S3 D3 D3 S3
C500 4 5 5 4
G D4 D4 G
1000nF
C1041 C1040
R55
100nF 100nF
470K
1%
nostuff
R65 0
P5.0V_CHG
3
D
Q14
SI2307DS
G
1 S
2
C592
100nF
VDC VDC_ADPT
R581
G_CHG
301K 301K
C591
1% 1% 100nF 25V
nostuff
R583 R582
43.2K 27.4K
U509
1% 1%
ISL6256AHRZ-T
19
CSIP CSIN
G_CHG
18
SGATE BGATE
25
DCIN
27
ACSET
28
DCSET
BOOT
UGATE
13
VDDP PHASE
26
VDD LGATE
PGND
7
CHLIM
9
VADJ CSOP
8
ACLIM CSON
5
ICM
VREF
EN
3
ICOMP CELLS
4
VCOMP GND
23
ACPRN THERM
24
DCPRN
C585
R571
10nF
100
1%
C586
6.8nF
R576
C587
10K
100nF
1%
25V
G_CHG G_CHG G_CHG G_CHG
KBC3_PRECHG
P3.3V_MICOM
R580
20K
1%
P3.3V_MICOM
Q508
RHU002N06
R70
20K
D
1%
G
1
S
2
3
VDC
R528 0.02 1W 1%
EC6 EC10 EC3
C581
R561 R562 68uF 68uF 68uF
100nF
25V 25V 25V
3.3 22
25V
AL AL AL
C583 100nF 25V
VDC_SGATE
Q507
PHKD13N03LT
1 8
S2 D2_2
2 7
G2 D2_1
3 6
S1 D1_2
4 5
G1 D1_1
G_CHG
1
BAT54
D509
20
3
17
C582
100nF
14 R563 3.3
25V
15
16
12
11
21
22
CHG_REF
(2.39V)
6
1 R585 1K 1%
KBC3_CHGEN
2
10
29 C594
R572
1nF
0
G_CHG G_CHG G_CHG
Cells Cells N/B
VDD 4
GND 3
Float
2
SHORT501
(ACTIVE LOW)
G_CHG
ADT3_SEL#
R852 51.1K 1%
VDC_SGATE
3
Q13
RHU002N06
2
D8
B340A
nostuff
1
2
3Arms @ 250KHz
U3
3.5Arms @ 400KHz
AP4435GM
1 8
S1 D1
2 7
S2 D2
3 6
EC22
S3 D3
4 5 C1071
68uF
G D4
25V 1nF
AL
R876 10 1% C1057 1nF
R877
10 1%
L1
8.2uH
R58 0.02 1W 1%
R579 R578
22 22
C590
22nF 25V
P3.3V_MICOM
2 2
D510 D511
3 3
DA204K-T147 DA204K-T147
1 1
INSTPAR
BAT3_SMCLK#
BAT3_SMDATA#
2
D:/mentor/Geneva2/Geneva2_ext_PV_0507/design_blocks/PWR_MV_Charger_Isl6256a
1
D
B7 HU-1M2012-121JT
B8 HU-1M2012-121JT
7
6
5
4
3
2
1 C
BATT-CONN-7P
J10
B516 MMZ1608Y601B
BAT3_DETECT#
B515 MMZ1608Y601B
BAT3_SMDATA#
B514 MMZ1608Y601B
BAT3_SMCLK#
Charge Volt: 12.96V (3Cell)
Charge Current: CHGBIT[0] - 2.67A; [1] - 0.35A B
ACPRN: 15.8V
DCPRN: 13.3V
KBC3_CHGBIT
OPERATION
BIT0 BIT1
0 0 3.08A (6Cell)
0 1 Not Reserved
1 0 2.5A (4Cell)
1 1 300mA (Trickle CHG)
R544 100 1%
KBC3_SMCLK#
R545
100 1%
KBC3_SMDATA#
A
SAMSUNG
ELECTRONICS
1
SRP Sheet Number: 75 of 78