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RTKA226110DE0040BU
Evaluation Board
The RTKA226110DE0040BU is a gate drive evaluation board following the GS665XXX-EVBDB daughter board
style and uses the RAA226110 device. This evaluation board consists of two GaN Systems 650V GaN
Enhancement-mode HEMTs (E-HEMTs) and all necessary circuits including half-bridge gate drivers, isolated
power supplies, and an optional heatsink to form a functional half-bridge power stage. It allows you to evaluate
the GaN E-HEMT performance in any half-bridge-based topology, either with the universal mother board
(GS665MB-EVB) or your own system design. The RTKA226110DE0040BU evaluation board provides a -3V
turn-off voltage solution. A 0V turn-off solution is easy to implement as there is no need for a negative power
supply rail. For Enhancement mode (E-mode) GaN devices, the V
additional noise margin for demanding applications, the RTKA226110DE0040BU board supplies -3V to the
RAA226110 gate driver. Although this increases the body diode reverse conduction voltage drop compared to a
design with a 0V pull-down, it can still be preferred in high power, high-speed gate drive applications.
Read the entire user manual and specifically, the warnings and restrictions notices before handling the product.
Persons handling the product(s) must have electronics training and observe good engineering practice standards.
Features
• Serves as a reference design and evaluation tool in addition to a deployment-ready solution for easy in-system
evaluation.
• Vertical mount style with a height of 35mm that fits in the majority of 1U designs and allows evaluation of a GaN
E-HEMT in traditional through-hole type power supply board
• Current shunt position for switching characterization testing
• Universal form factor and footprint for all products
Related Literature
For a full list of related documents, visit our website:
RAA226110
device page
Ordering Information
Part Number
RTKA226110DE0040BU
X0115711 Rev.1.00
Dec.7.20
DANGER!
This evaluation board is designed for engineering evaluation in a controlled lab environment
and should be handled by qualified personnel ONLY. High voltage is exposed on the board
during the test and even brief contact during operation may result in severe injury or death.
Never leave the board operating unattended. After it is de-energized, always wait until all
capacitors are discharged before touching the board.
CAUTION:
This product contains parts that are susceptible to damage by Electrostatic Discharge (ESD).
Always follow ESD prevention procedures when handling the product.
threshold voltage is 1.7V. To provide
GS
RAA226110 evaluation board
User Manual
Description
Page 1 of 25

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Summary of Contents for Renesas RTKA226110DE0040BU

  • Page 1 RTKA226110DE0040BU Evaluation Board The RTKA226110DE0040BU is a gate drive evaluation board following the GS665XXX-EVBDB daughter board style and uses the RAA226110 device. This evaluation board consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (E-HEMTs) and all necessary circuits including half-bridge gate drivers, isolated power supplies, and an optional heatsink to form a functional half-bridge power stage.
  • Page 2 RTKA226110DE0040BU ENABLE Iso. DC/DC PWMH VDC+ Isolator RAA226110 PWML IL611-1E Gate Driver Iso. DC/DC C4-10 Isolator RAA226110 IL611-1E Gate Driver Shunt VDC- Figure 1. RTKA226110DE0040BU Evaluation Board Block Diagram X0115711 Rev.1.00 Page 2 of 25 Dec.7.20...
  • Page 3: Functional Description

    RTKA226110DE0040BU 1. Functional Description Functional Description Control and Power I/Os The daughter board RTKA226110DE0040BU circuit diagram is shown in Figure 1. The control logic inputs on the 2x3 pin header J1 are listed in Table Table 1. Control Pins Description ENABLE Enable input.
  • Page 4 RTKA226110DE0040BU 1. Functional Description The universal 650V mother board evaluation kit includes following items: • Mother board GS665MB-EVB • 12V 1.2.1 12V Input The board can be powered by 9V to 12V on J1. The on-board voltage regulator creates 5V for daughter board and control logic circuits.
  • Page 5: Test Points

    An external power inductor (not included) can be connected between VSW (CON1) and VOUT (CON4/5) or VDC+ (CON2/3) for double pulse test. You can choose your inductor size to meet the test requirement. Renesas recommends using a power inductor with low inter-winding capacitance to obtain best switching performance. For the double-pulse testing use 2x 60µH/40A inductor (CWS, HF467-600M-40AV) in series.
  • Page 6: Buck/Standard Half-Bridge Mode

    The double-pulse signal is generated using a programmable signal generator or microcontroller/DSP board. Because this test involves high switching stress and high current, Renesas recommends setting the double pulse test gate signal as a single trigger mode or use long repetition period (for example >50ms-100ms) to avoid excess stress to the switches.
  • Page 7 10) on the daughter board RTKA226110DE0040BU. 2. Install RTKA226110DE0040BU on the mother board. Press all the way down until it clicks. Connect the probe between TP8 (low-side GaN gate) and TP3 (low-side GaN source) for gate voltage measurement in the daughter board.
  • Page 8 RTKA226110DE0040BU 1. Functional Description 4. Set up and check the PWM gate signal a. Turn on the 12V power. b. Check the two LEDs on the daughter board. They should be turned on indicating the isolated 9V is present. c. Set up the signal generator as shown in Figure 5 to create the waveforms .
  • Page 9: Test Results

    RTKA226110DE0040BU 1. Functional Description Test Results Pulses test (V = 400V, I = 33A, L = 120µH, R = 0Ω, I is connected to VDRV, gate driver current G(ON) GSEL is 0.3A, R = 1Ω, 8 pulses, period = 4µs, duty = 40%).
  • Page 10: Pcb Layout Guidelines

    RTKA226110DE0040BU 2. PCB Layout Guidelines PCB Layout Guidelines RTKA226110DE0040BU Evaluation Board (Daughter Board) Figure 10. RTKA226110DE0040BU Top Heat Sink Location Figure 11. RTKA226110DE0040BU Bottom • A: 2x GaN Systems 650V E-HEMT GS66516T, 60A/25mΩ • B: Decoupling capacitors C14-C17 and C47-C54 •...
  • Page 11: Package Outline

    Gate Driver Circuit The Renesas RAA226110 low-side gate driver is chosen for this design. This driver provides 5.8V gate drive with 3.8V UVLO. It supports the 5.8V turn-on and -3V/0V turn-off. It has separated source and sink drive outputs that eliminates the need for an additional diode.
  • Page 12 RTKA226110DE0040BU 2. PCB Layout Guidelines VDDHIN PES1-S5-S12-M VEELH VDDLIN VDRV PES1-S5-S12-M PWMH_IN PWML_IN CONN-1X6 VEELL Figure 14. Gate Drive Power Supply 2.1.4 Current Shunt • The board provides an optional current shunt position E (Figure 15) between the source of Q2 and power ground return, allowing the drain current measurement for switching characterization tests such as Eon/Eoff measurement.
  • Page 13: Thermal Design

    RTKA226110DE0040BU 2. PCB Layout Guidelines 2.1.5 Measurement with Current Shunt • When measuring VSW with current shunt, ensure all channel probe grounds and the current shunt BNC output case are all referenced to the source end of Q2 before the current shunt. The recommended setup of probes is...
  • Page 14 RTKA226110DE0040BU Circuit Schematic VDDHIN VDRVH VDRVH UNNAMED_1_RAA226110_I452_1 RB751V40 VDRV TP11 VDC+ OUTH CON1 UNNAMED_1_RAA226110_I452_10 OUTL 16PF UNNAMED_1_IL611_I227_PIN8 IN1+ VEEL RAA226110 UNNAMED_1_IL611_I227_PIN2 UNNAMED_1_IL611_I227_PIN7 UNNAMED_1_GS66516T_I226_4 OUT1 IN1- 3.3K UNNAMED_1_IL611_I227_PIN6 PWMH_IN IN2+ OUT2 VEELH UNNAMED_1_IL611_I227_PIN4 GS66516T IN2- IL611-1E VDRVH IGSEL1 16PF HIGH VOLTAGE SECTION...
  • Page 15 RTKA226110DE0040BU 2. PCB Layout Guidelines RTKA226110DE0040BU Bill of Materials Reference Designator Description Manufacturer Manufacturer Part SEE LABEL-RENAME BOARD PWB-PCB, RTKA226110E0040BU, REVA, MTL (Multilayer RTKA226110E0040BURVAPCB ROHS Pcb International (HK) Co.LTD) C19, C20, C21, C22, C23, C24, CAP-AEC-Q200, SMD, 0805, 4.7µF, 25V,...
  • Page 16 DO NOT POPULATE OR PURCHASE (2220Y6300105KXTWS2) TP1-TP11 DO NOT POPULATE OR PURCHASE U5, U6 PWR-SUPPLY, DC/DC CONVERT, SMD, CUI, INC PES1-S5-S12-M-TR 12.8x8.2, 12V, 1W, 84mA, ROHS RTKA226110DE0040BU Board Layout Figure 19. Silkscreen Top X0115711 Rev.1.00 Page 16 of 25 Dec.7.20...
  • Page 17 RTKA226110DE0040BU 2. PCB Layout Guidelines Figure 20. Assembly Top Figure 21. Top Layer Figure 22. Layer 2 X0115711 Rev.1.00 Page 17 of 25 Dec.7.20...
  • Page 18 RTKA226110DE0040BU 2. PCB Layout Guidelines Figure 23. Layer 3 Figure 24. Bottom Layer Figure 25. Silk Screen Bottom X0115711 Rev.1.00 Page 18 of 25 Dec.7.20...
  • Page 19 RTKA226110DE0040BU 2. PCB Layout Guidelines Figure 26. Assembly Bottom X0115711 Rev.1.00 Page 19 of 25 Dec.7.20...
  • Page 20 Appendix A - GS665MB-EVB To ensure that you have the latest GS665MB-EVB information, visit the GaN systems Inc website. GS665MB-EVB Circuit Schematic...
  • Page 21: Board Layout

    RTKA226110DE0040BU 3. Appendix A - GS665MB-EVB GS665MB-EVB Board Layout Figure 27. Assembly Top Figure 28. Assembly Bottom X0115711 Rev.1.00 Page 21 of 25 Dec.7.20...
  • Page 22 GS665MB-EVB Bill of Materials Quantity Reference Description Value Manufacturer Part number Assembly Note PCB bare 2-layer 2oz Cu. Gerber file: GS665EVBMB- Shenzhen Sprint GS665EVBMB- GerberNCDrill-RevB- GerberNCDrill-RevB- 20160628 20160628 CON1, CON2, CON3, TERMINAL SCREW VERTICAL PC MNT CON-10-32-SCRWMNT Keystone RevB- DO NOT INSTALL * CON4, CON5, CON6, CON7 CAP ALUM 220µF 20% 25V SMD...
  • Page 23 Quantity Reference Description Value Manufacturer Part number Assembly Note TP1, TP2, TP3, TP4, TEST POINT PCB TP-KEYSTONE-5010 KEYSTONE 5010 TP7, TP8, TP9, TP10, TP11, TP12, TP13 TR1, TR2 TRIM POT CERM 2kΩ 25TRN TOP DO NOT INSTALL * COMM MODE CHOKE 5.2A T/H CMC-08 RECOM CMC-08...
  • Page 24: Revision History

    RTKA226110DE0040BU 4. Revision History Revision History Rev. Date Description 1.00 Dec.7.20 Initial release X0115711 Rev.1.00 Page 24 of 25 Dec.7.20...
  • Page 25: Evaluation Board/Kit Important Notice

    If any part of this document refers to any third-party products or services it shall not be deemed a license grant by Renesas for the use of such third-party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third-party products or services or any intellectual property contained therein.
  • Page 26: Corporate Headquarters

    Renesas' products are provided only subject to Renesas' Terms and Conditions of Sale or other applicable terms agreed to in writing. No use of any Renesas resources expands or otherwise alters any applicable warranties or warranty disclaimers for these products.

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