Enhancement Mode Igbts - Peak Atlas DCA75 Pro User Manual

Peak Atlas DCA Pro User Guide

Enhancement Mode IGBTs

IGBT is an acronym for Insulated Gate Bipolar Transistor.
It combines the input characteristics of a MOSFET with
the output characteristics of a Bipolar Junction Transistor.
IGBTs are available in N or P channel types, enhancement mode or depletion
mode and with or without a free-wheeling diode.
Generally, their operation is very similar to MOSFETs. The saturation
capability of an IGBT is often better than an equivalent sized MOSFET at high
currents. At low currents, the saturation voltage of an IGBT is often worse than
an equivalent sized MOSFET.
The DCA Pro can drive the gate from 0V to 8V for enhancement mode IGBTs.
(IGBT symbol based on EN60617: 05-05-19)
In this example we have an N-Channel
IGBT with an integral free wheeling
diode.
Note the names of the leads; Gate,
Collector and Emitter.
Similar to the MOSFET analysis, the
gate threshold is the voltage between
the gate and emitter that causes the
device to start conducting (between the
collector and emitter). The DCA Pro
determines that conduction has started if
the collector current has reached 5mA.
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June 2019 – Rev 1.7