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elecTrical characTerisTics
junction temperature range, otherwise specifications are at T
noted.
SYMBOL
PARAMETER
t
Stop Condition Set-Up Time
SU,STO
t
Output Data Hold Time
HD,DATO
t
Input Data Hold Time
HD,DATI
t
Data Set-Up Time
SU,DAT
t
Input Spike Suppression Pulse Width
SP
V
SMBALERT Output Low Voltage
SMBALERT
I
SMBALERT High-Z Leakage Current
SMBALERT
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3350 is tested under pulsed load conditions such that
T
≈ T
. The LTC3350E is guaranteed to meet specifications from
J
A
0°C to 125°C junction temperature. Specifications over the –40°C to
125°C operating junction temperature range are assured by design,
characterization and correlation with statistical process controls. The
LTC3350I is guaranteed over the –40°C to 125°C operating junction
temperature range. Note that the maximum ambient temperature
consistent with these specifications is determined by specific operating
conditions in conjunction with board layout, the rated package thermal
impedance and other environmental factors. The junction temperature
(T
, in °C) is calculated from the ambient temperature (T
J
power dissipation (P
, in Watts) according to the formula:
D
T
= T
+ (P
• θ
)
J
A
D
JA
where θ
= 34°C/W for the UHF package.
JA
Typical perForMance characTerisTics
T
= 25°C, Application Circuit 4 unless otherwise noted.
A
Supercapacitor Backup Operation
V
OUT
2V/DIV
V
CAP
2V/DIV
V
IN
2V/DIV
0V
400ms/DIV
BACK PAGE APPLICATION CIRCUIT
, in °C) and
A
HV Electrolytic Backup Operation
P
= 25W
BACKUP
V
CAP
5V/DIV
V
OUT
5V/DIV
V
IN
5V/DIV
0V
3350 G01
APPLICATION CIRCUIT 6
For more information
The
denotes the specifications which apply over the specified operating
l
= 25°C (Note 2). V
= V
A
IN
OUT
CONDITIONS
I
= 1mA
SINK
V
= 5V
SMBALERT
Note 3: The LTC3350 includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature will exceed 125˚C when overtemperature protection is active.
Continuous operation above the specified maximum operating junction
temperature may impair device reliability.
Note 4: Dynamic supply current is higher due to the gate charge being
delivered at the switching frequency. See the Applications Information
section.
Note 5: Measurement error is the magnitude of the difference between the
actual measured value and the ideal value. V
VOUTSP and VOUTSN, representing input current. V
between ICAP and VCAP, representing charge current. Error for V
V
is expressed in μV, a conversion to an equivalent current may be
SNSC
made by dividing by the sense resistors, R
P
= 25W
BACKUP
20ms/DIV
3350 G02
www.linear.com/LTC3350
LTC3350
= 12V, V
= V
unless otherwise
DRVCC
INTVCC
MIN
TYP
MAX
0.6
0
0
100
200
l
is the voltage between
SNSI
SNSC
and R
SNSI
SNSC
Shunt Operation Using V
5
4
3
I
CHARGE
2
1
I
CAP2
0
–1
2.68
2.64
2.65
2.66
2.67
V
(V)
CAP2
UNITS
µs
900
ns
ns
ns
50
ns
mV
1
μA
is the voltage
and
SNSI
, respectively.
CAP2
V
= 2.7V
SHUNT
2.70 2.71
2.69
3350 G03
3350fc
7
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