Infineon EiceDRIVER 6ED Series Application Note

High voltage gate drive ic, 2nd generation, technical description
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Eic e DR IV ER ™
High voltage gate drive IC
6E D f a mil y - 2 nd g e nera tion
Technical description
Applic atio n N ote
AN-EICEDRIVER-6EDL04-1
Rev. 1.3, 2014-03-23
Indust rial Po wer & Con tro l

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Summary of Contents for Infineon EiceDRIVER 6ED Series

  • Page 1 Eic e DR IV ER ™ High voltage gate drive IC 6E D f a mil y - 2 nd g e nera tion Technical description Applic atio n N ote AN-EICEDRIVER-6EDL04-1 Rev. 1.3, 2014-03-23 Indust rial Po wer & Con tro l...
  • Page 2 Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life.
  • Page 3: Rev. 1.3, 2014

    Added classification icon “EiceDRIVER™ Compact” p. 1 p. 18 Updated section 3.8 Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™,...
  • Page 4: Table Of Contents

    6ED family - 2nd generation Technical Description Table of Contents Scope and product family ......................... 7 Technology Characteristics ......................8 Technical description of the 6ED family – 2 generation ............. 9 General data sheet review ........................9 Control input section ..........................9 3.2.1 Highside input pins (HIN), Lowside input pins (LIN) ................
  • Page 5 6ED family - 2nd generation Technical Description List of Figures Figure 1 Cross section of a FET in SOI-technology ................... 8 Different reference systems for a) 6ED family – 2 Figure 2 generation b) many other 6channel gate drive IC9 Figure 3 Control input pin structure a) negative logic b) positive logic .............
  • Page 6 6ED family - 2nd generation Technical Description List of Tables Members of 6ED family – 2nd generation .................... 7 Table 1 Table 2 Used parameters ..........................21 Application Note Rev. 1.3, 2014-03-23 AN-EICEDRIVER-6EDL04-1...
  • Page 7: Scope And Product Family

    6ED family - 2nd generation Technical Description Scope and product family The 6ED family – 2 generation is a high voltage gate drive IC for three-phase converters up to a maximum blocking voltage of 600V. The converters can be used for example in drives applications which are basing on induction machines (IM) or brushless DC motors.
  • Page 8: Technology Characteristics

    6ED family - 2nd generation Technical Description Technology Characteristics SOI is the abbreviation of Silicon-On-Insulator and is an advanced technique for MOS/CMOS fabrications. It differs from the conventional bulk process by placing the active transistor layer on the top of an insulator, as shown in Figure 1.
  • Page 9: Technical Description Of The 6Ed Family

    6ED family - 2nd generation Technical Description Technical description of the 6ED family – 2 generation General data sheet review The datasheet of the 6ED family – 2 generation shows an essential difference to many competitor parts such as [1] or [2] and others. The 6ED datasheets give the absolute maximum ratings referenced to VSS. This is an important aspect, when estimating the robustness of the IC.
  • Page 10: Highside Input Pins (Hin), Lowside Input Pins (Lin)

    6ED family - 2nd generation Technical Description 3.2.1 Highside input pins (HIN), Lowside input pins (LIN) 6ED-family 6ED-family 2nd gneration 2nd gneration INPUT INPUT HINx HINx NOISE NOISE LINx LINx FILTER FILTER =10.5 V =10.5 V Figure 3 Control input pin structure a) negative logic b) positive logic All gate control input pins are equipped with an integrated zener clamp which is activated, when the input signal...
  • Page 11: Control Output Section (/Fault)

    6ED family - 2nd generation Technical Description FILIN FILIN HIN/LIN HIN/LIN < t < t FILIN FILIN high Neg. logic HO/LO HO/LO HIN/LIN HIN/LIN > t > t FILIN FILIN HO/LO HO/LO FILIN FILIN HIN/LIN HIN/LIN < t < t FILIN FILIN high...
  • Page 12: Ic Supply Section

    6ED family - 2nd generation Technical Description ITRIP ITRIP 0.1V FAULT 0.5V Figure 6 Timing diagramm for ITRIP to FAULT propagation delay IC supply section The 6ED family – 2 generation supports the operation of IGBT as well as power MOSFET. There is a considerable difference between both types of power transistors in respect of driving their gates.
  • Page 13: Gate Drive Section

    6ED family - 2nd generation Technical Description Gate drive section 3.5.1 Low side gate drive The lowside gate drive sections contain FET in push-pull configuration. The typical on-state resistance of them = 35  for the turn-on FET (p-channel) and R =11 ...
  • Page 14: Negative Transients At High Side Reference (Pin Vsx)

    6ED family - 2nd generation Technical Description 6ED family – 2nd generation Bootstrap diode (opt.) LATCH HV LEVEL- DRIVER SHIFTER UVLO Figure 9 Structure of the lowside gate drive section 3.5.3 Negative Transients at High Side Reference (pin VSx) The 6ED family - 2nd generation is very robust against negative transient voltages thanks to the inherent oxide insulation of the SOI-technology.
  • Page 15: Figure 11 Size Of The Bootstrap Capacitor As A Function Of The Switching Frequency F

    6ED family - 2nd generation Technical Description This pin is on high potential again after transistor T2 is turned off and either T1 or D1 is conducting current. But now the bootstrap diode D blocks a reverse current, so that the charges on the capacitor cannot flow back to the capacitor C .
  • Page 16: Protection

    6ED family - 2nd generation Technical Description Protection 3.7.1 Overcurrent protection (ITRIP) The current signal of the DC-link reference is measured in order to recognize overcurrent or halfbridge short circuit events. A shunt resistor generates a voltage drop. A small RC-filter for attenuating voltage spikes is recommended.
  • Page 17: Deadtime & Shoot Through Prevention

    6ED family - 2nd generation Technical Description recovers, when the threshold of the integrated Schmitt-trigger according to Figure 12 is reached.This means that the resistor to V is not mandatory, but it may help to precisely adjust the fault-clear time. The datasheet specifies the typical fault clear time t = 1.9 ms which the current source needs to charge an FLTCLR...
  • Page 18 6ED family - 2nd generation Technical Description The maximum chip temperature T can be calculated with where T is the maximum ambient temperature. amb, max The dissipated power P is a combination of several sources. The following items contribute to the total power dissipation: the quiescent current (high side and low side) of the IC (P d1VCC...
  • Page 19: Creepage

    6ED family - 2nd generation Technical Description (12) The datasheet shows specific layouts, for which the given thermal resistance junction to ambient (R ) is valid. th(j-a) The thermal resistance which is given in the datasheet is specified for equal operation of all 6 power transistors. It is important to know, that different layouts may lead to different thermal resistances.
  • Page 20 6ED family - 2nd generation Technical Description A similar consideration must be done for the high side supply circuit. The loop of pins VBx, the bootstrap capacitor C , and the pin VS must also be small. Otherwise, there may be inductive voltage drops during the gate charging process of turn-on, which may result in spontaneous undervoltage lockout events at the high side section.
  • Page 21: List Of Used Parameters

    6ED family - 2nd generation Technical Description Glossary and general terms List of used parameters General big letters Time constant parameters small letters Time varying parameters italic letters physical parameters upright letters components in circuits Table 2 Used parameters Parameter Description Parameter Description...
  • Page 22: References

    6ED family - 2nd generation Technical Description References International rectifier: IR21364; datasheet, International rectifier, USA, 2009 Fairchild Semiconductors KOA corporation: “Handling precautions for flat chip resistors”, Revision B 1.1, application note, KOA corporation, Japan, 2007 KOA corporation: “Flat chip thick film resistors general purpose RK73B”, Revision 10.11.2006, data sheet, KOA corporation, Japan, 2006 IEC 60335-1: "Household and similar electrical appliances –...
  • Page 23 . i n f i n e o n . c o m Published by Infineon Technologies AG AN-EICEDRIVER-1...

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