Ic Supply Section; Figure 6 Timing Diagramm For Itrip To Fault Propagation Delay; Figure 7 Areas Of Operation - Infineon EiceDRIVER 6ED Series Application Note

High voltage gate drive ic, 2nd generation, technical description
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Figure 6
Timing diagramm for ITRIP to FAULT propagation delay
3.4

IC supply section

nd
The 6ED family – 2
considerable difference between both types of power transistors in respect of driving their gates. IGBT usually
have a gate threshold voltage V
3 V ... 4 V. As a consequence, MOSFET are usually driven sufficiently with a gate source voltage of V
without loosing conduction performance, where IGBT need a recommended gate emitter voltage of V
This difference is considered in the two different undervoltage lockout (UVLO) levels of the 6ED family – 2
generation. The absolute maximum rating is in all cases V
levels.
The supply voltage of the IC must reach initially at least a typical voltage of V
the lowside and highside supply, before the IC gets into an operational state. The levels of these parameters are
either 11.7 V or 9 V depending on the individual type of the 6ED family. It is recommended to have a margin of
at least 1 V in respect to V
shuts down the individual gate sections, when the related supply voltage is below V
here are either 9.8 V or 8.1 V. This prevents the driven transistors from critically low gate voltage levels during
on-state and therefore from excessive power dissipation. Please refer to section 3.7.4 for further information.
Figure 7
Areas of operation
Figure 7Figure 8 shows the IC states and the correlated areas of operation concerning the supply voltages for
both the lowside supply voltage v
voltages above 20 V, because here the internal clamping structures begin to break through and the IC is
endangered to be damaged by locally excessive power dissipation.
Application Note
AN-EICEDRIVER-6EDL04-1
v
ITRIP
V
ITRIP
v
FAULT
generation supports the operation of IGBT as well as power MOSFET. There is a
= 4.5 V ... 7 V, where power MOSFET have a gate threshold of V
GE(th)
and V
in order to avoid unintended shut-down caused by noise. The IC
CCUV+
BSUV+
V
, V
CCMAX
20
V
17.5
V
+1V
CCUV+
V
+1V
BSUV+
V
, V
CCUV+
BSUV+
V
, V
CCUV-
BSUV-
IC STATE
OFF
ON
and the highside supply voltages v
CC
0.1V
0.5V
t
t
FLT
FLT
= 20 V regardless of the undervoltage lockout
CC,max
BSMAX
v
CC
v
BS
ON
Forbidden
ON
ON
Recommended
Recommended
Area
Area
12
6ED family - 2nd generation
Technical Description
t
t
and V
, respectively for
CCUV+
BSUV+
or V
CCUV-
t
ON
ON
OFF
Area
. There is a forbidden area for supply
BS
Rev. 1.3, 2014-03-23
=
GS(th)
= 10 V
GS
= 15 V.
GE
nd
. The levels
BSUV-

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